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Taiwan Semiconductor Silicon Junction Switching Diode, Single, 3 A, 200 V, 2-Pin DO-214AA ES3D V7G

Category Switching Diodes Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin China
Brand Taiwan Semiconductor
Height 2.62mm
Length 7.11mm
Model ES3D V7G
Width 6.22mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type DO-214AA
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 100A
Maximum Forward Voltage Vf 950mV
Peak Reverse Recovery Time trr 35ns
Maximum Forward Current If 3A
Maximum Peak Reverse Repetitive Voltage Vrrm 200V

Key Features

  • The diode features a surface mount DO-214AA package suitable for compact PCB designs.
  • Maximum forward voltage is specified at 950 mV ensuring efficient conduction.
  • Operating temperature ranges from -55°C to 150°C allowing wide thermal tolerance.
  • Peak non-repetitive surge current capability is 100 A for handling transient loads.
  • Pin count is 2, facilitating simple electrical connection.
  • Peak reverse recovery time is 35 ns, supporting fast switching operations.
  • The product is made in China and designed for electronic component applications requiring reliable rectifier diodes.

Product Description

Taiwan Semiconductor ES3D V7G is a high-performance silicon junction switching diode designed for use in electronic components requiring rectification and switching functionality. Featuring a maximum forward current of 3 A and a peak repetitive reverse voltage of 200 V, this diode delivers reliable power handling in a compact DO-214AA surface mount package.

This diode's forward voltage rating of 950 mV ensures low conduction losses, optimizing efficiency in power conversion and signal rectification circuits. It operates effectively within a broad temperature range from -55°C to 150°C, making it suitable for demanding industrial and commercial electronics environments.

The diode’s fast peak reverse recovery time of 35 ns supports high-speed switching applications. With a peak non-repetitive forward surge current capacity of 100 A, it is robust against transient electrical spikes, supporting resilient circuit designs.

Physically, the diode measures 7.11 mm in length, 6.22 mm in width, and 2.62 mm in height, facilitating easy implementation in space-constrained PCB layouts. Its two-pin design simplifies integration into electrical systems.

Common use cases include power electronics, switching power supplies, and rectifier circuits in industrial, manufacturing, and electronic device applications. This diode ensures efficient switching and protection in these environments.

The diode features a surface mount DO-214AA package suitable for compact PCB designs. Maximum forward voltage is specified at 950 mV ensuring efficient conduction. Operating temperature ranges from -55°C to 150°C allowing wide thermal tolerance.

Peak non-repetitive surge current capability is 100 A for handling transient loads. Pin count is 2, facilitating simple electrical connection. Peak reverse recovery time is 35 ns, supporting fast switching operations. Dimensions are compact with 7.11 mm length, 6.22 mm width, and 2.62 mm height.

Made in China for quality assurance. Explore our full range of semiconductor components and Switching Diodes on EnvMart for comprehensive solutions to your power electronics needs.

Taiwan Semiconductor Silicon Junction Switching Diode, Single, 3 A, 200 V, 2-Pin DO-214AA ES3D V7G
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Frequently Asked Questions

The maximum forward current rating of this diode is 3 A.

This diode measures 7.11 mm in length, 6.22 mm in width, and 2.62 mm in height.

The diode comes in a surface mount DO-214AA package.

The maximum forward voltage specified for this diode is 950 mV.

The operating temperature range for this diode is from -55°C to 150°C.

The peak non-repetitive forward surge current capability is 100 A.

This diode has a pin count of 2, facilitating simple electrical connections.

The diode configuration for this model is a single diode.

Common applications for this diode include power electronics, switching power supplies, and rectifier circuits.

This diode is manufactured in China.

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