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onsemi Bipolar Transistor 8 A NPN 250 V 2W TO-220 3-Pin Through Hole MJE15032G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 30.02mm |
| Length | 10.53mm |
| Model | MJE15032G |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | MJE15032 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 250V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 250V |
| Maximum Power Dissipation Pd | 2W |
| Maximum DC Collector Current Idc | 8A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 30MHz |
Key Features
- Maximum collector current of 8 A for high load handling.
- Collector-emitter voltage rated up to 250 V for robust switching.
- Power dissipation capacity of 2 W suitable for moderate power use.
- High DC current gain starting at minimum hFE of 10.
- Operates efficiently in temperatures from -65°C to 150°C.
- Maximum transition frequency of 30 MHz supports high-frequency use.
- Compact TO-220 package with through-hole mounting pins.
- Single NPN transistor configuration for easy integration.
Product Description
onsemi MJE15032G is a high-power NPN bipolar transistor designed for industrial and electronic applications requiring up to 8 A collector current and 250 V collector-emitter voltage. Encapsulated in a TO-220 through-hole package with 3 pins, it offers reliable power dissipation of 2 W and robust performance across a wide temperature range (-65°C to 150°C).
This transistor features high DC current gain and a maximum transition frequency of 30 MHz, making it suitable for high-frequency driver roles - commonly used in audio amplifier circuits and power switching applications. Its single configuration ensures straightforward integration in various discrete semiconductor designs.
The device dimensions (height 30.02 mm, length 10.53 mm, width 4.83 mm) and through-hole mounting type provide mechanical stability and ease of assembly on printed circuit boards (PCBs). The MJE15032G series from onsemi is renowned for its enhanced current gain and bandwidth product characteristics.
The transistor is supplied in tubes, making it suitable for batch manufacturing and insertion processes in industrial settings. It does not carry automotive qualification, focusing instead on general industrial and commercial electronics environments.
Maximum DC collector current of 8 A allows handling of substantial load currents. Collector-emitter voltage rating of 250 V supports high-voltage switching. Power dissipation up to 2 watts ensures stability under power loads.
Minimum DC current gain of 10 guarantees effective amplification in circuit design. Operating between -65°C and 150°C for diverse environmental applications. High-frequency capability supports switching up to 30 MHz. TO-220 package allows durable and secure PCB through-hole mounting.
Suitable for use as a high-frequency driver in audio amplifier systems.
This product is essential for engineers and technicians implementing discrete transistor solutions in industrial electronics, power management, and audio amplification. Explore additional onsemi transistor options and other Bipolar Transistors in the EnvMart catalog to optimize your design requirements.
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Frequently Asked Questions
The maximum collector current of the MJE15032G is 8 A, allowing it to handle substantial load currents in various applications.
This model has a collector-emitter voltage rating of 250 V, making it suitable for high-voltage switching applications.
The MJE15032G can dissipate power up to 2 W, which ensures stability under moderate power loads.
This transistor supports a maximum transition frequency of 30 MHz, making it suitable for high-frequency applications.
The dimensions of the TO-220 package are 30.02 mm in height, 10.53 mm in length, and 4.83 mm in width.
The MJE15032G features a single NPN transistor configuration, which allows for straightforward integration into various circuit designs.
The minimum DC current gain (hFE) of this transistor is 10, ensuring effective amplification in circuit applications.
It utilizes a through-hole mounting type, which provides mechanical stability and ease of assembly on printed circuit boards (PCBs).
The maximum emitter-base voltage (VEBO) for the MJE15032G is 5 V, which is important for ensuring safe operation in circuits.
The MJE15032G is manufactured in India, which is relevant for sourcing and compliance considerations.
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