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| Country of Origin | China |
|---|---|
| Brand | Nexperia |
| Height | 1.5mm |
| Length | 4.6mm |
| Model | BCX55,115 |
| Width | 2.5mm |
| Mount Type | Surface |
| Series | BCX55 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Minimum DC Current Gain hFE | 63 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 60V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 1.35W |
| Maximum DC Collector Current Idc | 1A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 180MHz |
| Diodes Inc ZXTN4000ZTA NPN Transistor, 1 A, 60 V, 3-Pin SOT-89Brand | DiodesZetex |
Nexperia BCX55,115 NPN Transistor is a high-performance bipolar transistor specifically designed for automotive and general electronic applications. It supports a maximum collector current of 1 A and a collector-emitter voltage of 60 V, making it suitable for medium power amplification tasks.
Its SOT-89 package ensures compatibility with surface mount technology, providing reliable mechanical and thermal performance. The transistor has a single NPN configuration with a minimum DC current gain of 63, ensuring efficient signal amplification.
Rated for operation from -55°C to 150°C, this transistor is compliant with RoHS standards and certified under AEC-Q101 for automotive reliability. It features a maximum power dissipation of 1.35 W and a high transition frequency of 180 MHz, making it suitable for switching and amplifying RF signals.
The compact dimensions of 4.6 mm length, 2.5 mm width, and 1.5 mm height facilitate dense PCB layouts in industrial, automotive, communication, and consumer electronics devices. This transistor supports a maximum collector current of 1 ampere.
It has a collector-emitter voltage rating of 60 volts. The package type is SOT-89 suitable for surface mount technology. The transistor configuration is single with NPN polarity. The maximum power dissipation for this transistor is 1.35 watts.
The minimum DC current gain (hFE) is 63, suitable for amplification tasks. The device operates reliably between temperatures of -55°C to 150°C. It complies with RoHS standards and meets the automotive AEC-Q101 certification.
The transistor has a compact size with dimensions 4.6 mm length, 2.5 mm width, and 1.5 mm height. It features a maximum transition frequency (ft) of 180 MHz, enabling high-frequency switching.
This transistor is widely used in automotive electronic control units, industrial equipment, communication devices, and power management applications where stable transistor performance and reliability are required.
Explore the comprehensive range of semiconductor components including Bipolar Transistors by Nexperia at EnvMart for your high-quality electronics manufacturing needs.
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