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onsemi 8 A NPN Bipolar Transistor 250 V TO-220 3-Pin, High DC Gain MJE15032G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 30.02mm
Length 10.53mm
Model MJE15032G
Width 4.83mm
Mount Type Through Hole
Series MJE15032
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 250V
Minimum DC Current Gain hFE 10
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 250V
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc 8A
Transistor Configuration Single
Maximum Transition Frequency ft 30MHz

Key Features

  • This transistor supports a maximum power dissipation of 2 W.
  • It operates within a temperature range from -65°C to 150°C.
  • The device has a minimum DC current gain of 10.
  • It offers a maximum transition frequency of 30 MHz for audio amplifier uses.
  • The package type is through-hole TO-220 ensuring sturdy mounting.
  • The transistor polarity is NPN with a single transistor configuration.
  • This product is manufactured with no automotive standard certification.

Product Description

onsemi MJE15032G is a bipolar NPN transistor designed for high-frequency driver applications in audio amplifiers and other industrial electronics. It delivers a maximum collector current of 8 A and can withstand up to 250 V across collector-emitter junctions, housed in a reliable TO-220 3-pin through-hole package suitable for robust mechanical mounting.

The device supports a maximum power dissipation of 2 W and features a minimum DC current gain (hFE) of 10, making it efficient for amplification tasks. It operates effectively within a wide temperature range from -65°C up to 150°C, offering dependable performance in diverse environmental conditions.

Its maximum transition frequency of 30 MHz enables operation in high-frequency circuits, ideal for audio amplifiers and other electronic equipment requiring fast switching. The MJE15032G has a single transistor configuration with NPN polarity, providing versatility in semiconductor circuit designs.

The mechanical specifications include a compact form factor measuring 30.02 mm in height, 4.83 mm in width, and 10.53 mm in length, ensuring compatibility with standard industrial and laboratory circuit boards. The transistor does not have automotive standard certification and is targeted primarily at general industrial and laboratory electronic applications.

Available in tubes and packs, the MJE15032G facilitates improved production efficiency through ready-to-use packaging options for insertion into machinery and electronic assemblies.

This transistor supports a maximum power dissipation of 2 W. It operates within a temperature range from -65°C to 150°C. The device has a minimum DC current gain of 10. It offers a maximum transition frequency of 30 MHz for audio amplifier uses.

The package type is through-hole TO-220 ensuring sturdy mounting. The transistor polarity is NPN with a single transistor configuration. It has 3 pins with precise mechanical dimensions: height 30.02 mm, width 4.83 mm, length 10.53 mm.

This product is manufactured with no automotive standard certification.

For customers working in industrial, laboratory, and electronic manufacturing sectors, this onsemi transistor offers a reliable and powerful solution. It is suited for use in audio amplifiers, control circuits, and applications requiring high collector current and voltage tolerances.

Explore more Bipolar Transistors and other semiconductor components for your projects at EnvMart to find the perfect models for your technical requirements.

onsemi 8 A NPN Bipolar Transistor 250 V TO-220 3-Pin, High DC Gain MJE15032G
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Frequently Asked Questions

The MJE15032G can handle a maximum collector current of 8 A.

It can withstand a maximum collector-emitter voltage of 250 V.

This model supports a maximum power dissipation of 2 W.

The device operates effectively within a temperature range from -65°C to 150°C.

It has a minimum DC current gain (hFE) of 10.

The maximum transition frequency is 30 MHz, suitable for audio amplifier applications.

It is housed in a TO-220 through-hole package, ensuring sturdy mounting.

The transistor measures 30.02 mm in height, 4.83 mm in width, and 10.53 mm in length.

This model features a single transistor configuration with NPN polarity.

The maximum emitter-base voltage (VEBO) is 5 V.

This product does not have automotive standard certification.

It is suitable for high-frequency driver applications in audio amplifiers and other industrial electronics.

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