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onsemi NPN Darlington Transistor 1 A 80 V, HFE 1000, 4-Pin SOT-223 BSP52T1G

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onsemi NPN Darlington Transistor 1 A 80 V, HFE 1000, 4-Pin SOT-223 BSP52T1G

Name: onsemi NPN Darlington Transistor 1 A 80 V, HFE 1000, 4-Pin SOT-223 BSP52T1G
Brand: onsemi
SKU: 138663

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Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.57mm
Length	6.5mm
Model	BSP52T1G
Mount Type	Surface
Series	BSP52T1
Maximum Operating Temperature	150°C
Package Type	SOT-223
Minimum Operating Temperature	-65°C
Pin Count	4
Maximum Continuous Collector Current Ic	1A
Maximum Collector Emitter Voltage Vceo	80V
Number of Elements per Chip	1
Minimum DC Current Gain hFE	1000
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Emitter Saturation Voltage VceSAT	1.3V
Maximum Collector Base Voltage VCBO	90V
Maximum Collector Cut-off Current	10μA
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	0.8W
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Key Features

This transistor features a high minimum DC current gain (hFE) of 1000.
The package type is SOT-223 with a 4-pin surface mount configuration.
Maximum power dissipation is 0.8 W suitable for low to medium power applications.
Temperature operating range extends from -65°C to 150°C, ensuring durability under harsh conditions.
It supports automotive standards and is qualified to AEC-Q101 for automotive reliability.
Collector-emitter saturation voltage is low at a maximum of 1.3 V improving efficiency in switching applications.
The transistor polarity is NPN, ideal for amplification and switching in electronic circuits.
Maximum collector-base voltage is 90 V and emitter-base voltage is 5 V, defining safe operating limits.

Product Description

onsemi BSP52T1G is an NPN Darlington transistor designed for reliable performance in electronic circuits requiring high current gain and low saturation voltage. Rated at 1 A maximum continuous collector current and an 80 V collector-emitter voltage, this transistor suits power amplification and switching applications.

The device features a high minimum DC current gain (hFE) of 1000, enhancing overall circuit gain and efficiency. It comes in a 4-pin SOT-223 surface mount package, enabling compact PCB layouts in consumer electronics, automotive, and industrial controls.

This transistor can operate safely at temperatures ranging from -65°C up to 150°C, ensuring robustness in harsh environments. It meets automotive grade AEC-Q101 standards, making it suitable for automotive electronic systems that require high reliability and automotive qualification.

Additional technical highlights include a maximum collector-emitter saturation voltage of 1.3 V, which ensures efficient switching with reduced power losses. The maximum collector-base voltage and emitter-base voltage ratings are 90 V and 5 V respectively, defining safe limits for circuit design.

The compact physical dimensions of length 6.5 mm and height 1.57 mm allow easy integration into dense circuit boards. This product is ideal for applications in electronic components, semiconductor discrete devices, and power management.

High current gain (hFE) of 1000 for efficient amplification. SOT-223 4-pin package supports surface mount assembly. Power rating of 0.8 W accommodates moderate power designs. Wide operating temperature range from -65°C to 150°C.

Automotive grade qualification ensures robust automotive use. Compact size enables flexible design layouts.

This onsemi Darlington transistor is a valuable component for industrial, automotive, and electronic manufacturing sectors. For further products, explore the Electronics & Electricals, Semiconductor, and Darlington Transistor categories at EnvMart.