onsemi Bipolar Transistor NPN 1.5 A 80 V 3-Pin TO-225 BD139G

onsemi BD139G is a high-performance bipolar junction transistor designed for general-purpose use in electronic circuits. It features an NPN transistor configuration with a maximum DC collector current of 1.5 A and a collector-emitter voltage of 80 V, making it suitable for medium current switching and amplification tasks.

Housed in a reliable 3-pin TO-225 through-hole package, the transistor offers ease of installation and good thermal dissipation with a maximum power dissipation of 1.25 W. The device operates efficiently over a wide temperature range from -55°C up to 150°C, ensuring durability in demanding industrial environments.

This transistor has a minimum DC current gain of 25, supporting effective amplification in a variety of low to medium power circuits. It is configured as a single transistor in NPN polarity, making it compatible with many standard circuit designs.

Dimensions of the BD139G transistor are compact, with a height of 11.1 mm, length of 7.8 mm, and width of 3 mm, which allows flexible placement on printed circuit boards. Although this model is not certified for automotive standards, it is well suited for industrial electronics, power amplification, switching, and control applications.

Supports maximum DC collector current of 1.5 A. Maximum collector-emitter voltage of 80 V. 3-pin TO-225 through-hole package provides robust mounting. Thermal rating allows 1.25 W power dissipation. Minimum current gain (hFE) of 25 for amplification.

Wide operating temperature range from -55°C to 150°C. Single NPN transistor type for versatile electronics use. Compact form factor: 11.1 mm height, 7.8 mm length, 3 mm width.

Commonly used in electronic components, power supplies, signal amplifiers, and general semiconductor applications, the onsemi BD139G transistor stands as an essential component for industrial, laboratory, and manufacturing electronics projects. Its high reliability and standardized package make it a preferred choice in discrete semiconductor device selection.

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