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Nexperia Bipolar Transistor 100 mA NPN 30 V Surface Mount 3-Pin SOT-143B BCV61B

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model BCV61B
Width 2.5mm
Mount Type Surface
Series BCV61
Maximum Operating Temperature 150°C
Package Type SOT-143B
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 30V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 30V
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Maximum DC collector current of 100 mA ensures reliable switching operations.
  • NPN transistor polarity suitable for general-purpose amplification.
  • Surface mount package SOT-143B with compact 3-pin configuration.
  • Maximum collector emitter voltage of 30 V supports a variety of low-power applications.
  • High minimum DC current gain of 100 for efficient transistor performance.
  • Operating temperature range from -65°C to 150°C for robust reliability.
  • Maximum power dissipation of 250 mW for standard low-power use.
  • Maximum transition frequency of 100 MHz enables moderate frequency response.

Product Description

Nexperia BCV61B is a general-purpose bipolar junction transistor (BJT) designed for low-power switching and amplification tasks. Featuring an NPN polarity, it supports a maximum DC collector current of 100 mA and a collector emitter voltage up to 30 V. This device is housed in a compact 3-pin SOT-143B surface mount package, allowing for efficient PCB layout in space-constrained electronic circuits.

The transistor operates reliably within a temperature range of -65°C to 150°C, making it suitable for industrial, automotive (non-automotive grade), and consumer electronics applications that require durable and stable performance under varying environmental conditions. Its minimum DC current gain (hFE) of 100 ensures strong amplification capabilities in analog or switching circuits.

The maximum power dissipation rating of 250 mW aligns with low-power electronics, while the transition frequency of 100 MHz supports applications operating in moderate frequency bands such as RF amplification or signal processing.

Key physical dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height keep the footprint minimal for high-density circuit designs. Additionally, the transistor conforms to RoHS environmental guidelines, ensuring compliance with hazardous substance limits.

Maximum collector current: 100 mA. Collector emitter voltage rating: 30 V. Surface mount SOT-143B package. NPN transistor configuration. Minimum DC gain of 100. Operating temperature range: -65°C to 150°C. Power dissipation: 250 mW.

Transition frequency: 100 MHz. Compact dimensions for modern PCB designs. RoHS compliant device.

This transistor is ideally suited for use in industrial electronics, signal amplification circuits, switch mode operation, and prototype or production PCB assemblies requiring a reliable, small footprint transistor.

Explore additional Nexperia bipolar transistor solutions and electronic components at EnvMart for advanced electronic design and manufacturing needs.

Explore more products in our Bipolar Transistors category.

Nexperia Bipolar Transistor 100 mA NPN 30 V Surface Mount 3-Pin SOT-143B BCV61B
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Frequently Asked Questions

The maximum DC collector current for the BCV61B is 100 mA, ensuring reliable switching operations.

This model has a collector emitter voltage rating of 30 V, suitable for various low-power applications.

It is housed in a compact SOT-143B surface mount package with a 3-pin configuration.

The operating temperature range for this transistor is from -65°C to 150°C, allowing for stable performance in diverse conditions.

The minimum DC current gain (hFE) of this transistor is 100, providing efficient amplification capabilities.

The maximum power dissipation for this model is 250 mW, aligning it with standard low-power applications.

The maximum transition frequency is 100 MHz, enabling moderate frequency response suitable for RF applications.

The physical dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height, making it suitable for high-density circuit designs.

Yes, the BCV61B conforms to RoHS environmental guidelines, ensuring compliance with hazardous substance limits.

The maximum emitter base voltage (VEBO) for this transistor is 6 V.

This model features an NPN transistor configuration, suitable for general-purpose amplification.

This transistor is suitable for industrial electronics, signal amplification circuits, and switch mode operations in PCB assemblies.

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