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onsemi Darlington Transistor NPN 1 A 80 V High Gain 1000 hFE 4-Pin SOT-223 BSP52T1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.57mm |
| Length | 6.5mm |
| Model | BSP52T1G |
| Mount Type | Surface |
| Series | BSP52T1 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 4 |
| Maximum Continuous Collector Current Ic | 1A |
| Maximum Collector Emitter Voltage Vceo | 80V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 1000 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.3V |
| Maximum Collector Base Voltage VCBO | 90V |
| Maximum Collector Cut-off Current | 10μA |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 0.8W |
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| Nexperia BST50,115 1 Darlington Transistor NPN, 1 A 45 V HFE | 1000, 4-Pin UPAKBrand: Nexperia |
| onsemi BSP52T1G 1 Darlington Transistor NPN, 1 A 80 V HFE | 1000, 4-Pin SOT-223 |
Key Features
- Packaged in a compact 4-pin SOT-223 surface-mount package.
- Designed for high gain bipolar transistor applications.
- Operating temperature range from -65°C to 150°C.
- Maximum power dissipation is 0.8 W ensuring efficient thermal operation.
- Maximum collector emitter saturation voltage is 1.3 V for optimized switching performance.
- Automotive qualified to AEC-Q101 standard for reliability in demanding environments.
- Low maximum collector cut-off current of 10 μA for minimal leakage.
- Ideal for industrial, automotive, and power control applications.
Product Description
onsemi BSP52T1G is a high-gain NPN Darlington transistor encapsulated in a compact 4-pin SOT-223 surface-mount package. It supports a maximum continuous collector current (Ic) of 1 A and a collector emitter voltage (Vceo) up to 80 V, making it highly suitable for switching and amplification uses in industrial and automotive electronics. Featuring a minimum DC current gain (hFE) of 1000, it offers enhanced amplification capabilities.
This transistor operates reliably over a broad temperature range from -65°C to 150°C and dissipates a maximum power of 0.8 W, supporting stable thermal management. The maximum collector emitter saturation voltage is 1.3 V, contributing to efficient switching performance. The low maximum collector cut-off current of 10 μA ensures minimal leakage current, enhancing the device’s efficiency in low-power circuits.
Qualified to the AEC-Q101 automotive standard, the BSP52T1G transistor meets rigorous reliability requirements, making it well-suited for automotive applications or any demanding industrial environments requiring robust discrete semiconductor components.
Surface mount footprint and a length of 6.5 mm with a height of 1.57 mm provide compact integration capabilities for modern electronic circuits. This device is a versatile choice for power switching, signal amplification, and other electronic applications requiring a durable and high-performance NPN Darlington Transistor.
Packaged in a 4-pin SOT-223 surface mount for compact PCB designs. High current gain of 1000 enables efficient amplification. Wide operating temperature range from -65°C to 150°C. Low saturation voltage enhances switching efficiency.
Qualified to automotive AEC-Q101 standard for reliability. Low leakage current improves overall circuit efficiency. Suitable for industrial, automotive, and power control uses. Explore more semiconductor solutions from onsemi and enhance your industrial and automotive electronics design with reliable, high-quality discrete components.
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Frequently Asked Questions
The maximum continuous collector current (Ic) for this model is 1 A.
It supports a maximum collector-emitter voltage (Vceo) of 80 V.
The minimum DC current gain (hFE) is 1000, providing enhanced amplification capabilities.
It operates reliably over a temperature range from -65°C to 150°C.
The maximum power dissipation for this model is 0.8 W, ensuring efficient thermal operation.
The maximum collector emitter saturation voltage (VceSAT) is 1.3 V, which optimizes switching performance.
It is packaged in a compact 4-pin SOT-223 surface-mount package.
The height is 1.57 mm and the length is 6.5 mm, allowing for compact integration in PCB designs.
It is qualified to the AEC-Q101 automotive standard, ensuring reliability in demanding environments.
The maximum collector cut-off current is 10 μA, which minimizes leakage current.
This model is suitable for industrial, automotive, and power control applications.
The transistor polarity is NPN, making it suitable for various amplification and switching applications.
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