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Vishay N-Channel MOSFET, 14 A, 100 V, Enhancement Mode, 3-Pin TO-220 IRF530PBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRF530PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRF |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 160mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 88W |
| Typical Gate Charge Qg @ Vgs | 26nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 2.5V |
| IRF530PBF N-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB VishayBrand | Vishay |
Key Features
- Operates in enhancement mode for precise control.
- Maximum power dissipation of 88 W ensures robust performance.
- Low maximum drain-source resistance of 160 mΩ minimizes losses.
- Capable of handling gate-source voltages from -20 V to +20 V safely.
- Wide operating temperature range from -55°C to 175°C for industrial reliability.
- Compact dimensions with length 10.41 mm, width 4.7 mm, and height 9.01 mm.
- Typical gate charge of 26 nC at specified gate-source voltage.
- Ideal for power switching and amplification applications in electronics.
Product Description
Vishay IRF530PBF is a high-performance N-Channel MOSFET transistor designed for power management applications requiring robust and efficient switching capabilities. Featuring a maximum continuous drain current rating of 14 A and a maximum drain-source voltage of 100 V, this device ensures reliable operation in demanding electrical environments.
Its enhancement mode channel type enables precise control of conduction, making it highly suitable for industrial, automotive, and consumer electronics applications. The MOSFET is housed in a durable TO-220 package with 3 through-hole pins, facilitating easy PCB mounting and mechanical stability.
With a low maximum drain-source resistance of 160 milliohms, the device minimizes conduction losses, improving overall system efficiency. The typical gate charge of 26 nanocoulombs at 10 V gate-source voltage allows for fast switching speeds and reduced power dissipation.
Operating temperatures range from -55°C to 175°C, ensuring stable performance under extreme thermal conditions, making it suitable for industrial, automotive, and HVAC system electronics. The device includes built-in voltage and current ratings aligned with industrial standards.
The compact physical size, including a length of 10.41 mm, width of 4.7 mm, and height of 9.01 mm, makes it adaptable to space-constrained designs. Operates in enhancement mode for precise conduction control. Maximum power dissipation of 88 W supports high load environments.
Low Rds(on) value reduces conduction losses and heat generation. Robust package type (TO-220) for effective heat dissipation. Wide operating temperature ensures performance in harsh conditions. Suitability for industrial, laboratory, and commercial electronic applications.
Compatible with through hole mounting in PCB designs. Supports gate voltages between -20 V and +20 V for versatile circuit integration.
This Vishay IRF530PBF MOSFET is well-suited for use in power supply modules, motor drivers, switching regulators, and other electronic circuits demanding high efficiency and reliability. You may find more industrial semiconductor components and power device solutions by browsing the Semiconductor and MOSFET categories at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 14 A.
This unit has a maximum drain-source voltage rating of 100 V.
The maximum power dissipation for this MOSFET is 88 W.
The typical gate charge at a gate-source voltage of 10 V is 26 nC.
It can handle gate-source voltages from -20 V to +20 V safely.
The dimensions of the TO-220 package are 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height.
The maximum drain-source resistance is 160 mΩ.
The operating temperature range for this model is from -55°C to 175°C.
This model supports through-hole mounting for easy PCB integration.
It is typically used in power supply modules, motor drivers, and switching regulators.
This MOSFET operates in enhancement mode, allowing for precise control of conduction.
The pin count for this model is 3.
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