$6.14
$5.95
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Toshiba DTMOSIV N-Channel MOSFET 39 A 600 V Enhancement Mode 3-Pin TO-220 TK39A60W,S4VX(M
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | Toshiba |
| Height | 15mm |
| Length | 10mm |
| Model | TK39A60W,S4VX(M |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | DTMOSIV |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 39A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 50W |
| Typical Gate Charge Qg @ Vgs | 110nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Key Features
- Maximum continuous drain current of 39 amperes ensures reliable power handling.
- Maximum drain-source voltage rating of 600 volts for robust operation.
- Enhancement mode device with a 3-pin through-hole TO-220 mounting package.
- Low maximum drain-source resistance of 65 milliohms enabling efficient conduction.
- Maximum power dissipation capability of 50 watts for thermal management.
- Typical gate charge of 110 nanocoulombs at Vgs=10 V allows fast switching.
- Wide maximum gate-source voltage range from -30 V to +30 V.
- Forward voltage of -1.7 volts ensures effective switching performance.
Product Description
Toshiba TK39A60W,S4VX(M is a high-quality N-Channel MOSFET transistor featuring the DTMOSIV series technology designed for efficient power switching in industrial and electronic control applications. This device supports a maximum continuous drain current of 39 A, making it suitable for moderate to high current loads.
Encapsulated in a durable TO-220 through-hole package with 3 pins, the MOSFET offers reliable mounting and excellent thermal dissipation with a maximum power dissipation of 50 W. Its robust voltage ratings include a maximum drain-source voltage of 600 V and a gate-source voltage range from -30 V to +30 V, allowing operation in a variety of high voltage circuits.
The device operates in enhancement mode and offers a low drain-source on-resistance of 65 milliohms, minimizing power loss during conduction. The typical gate charge of 110 nC at Vgs=10 V ensures rapid switching speeds, critical for power efficiency and reduced switching losses.
Designed to operate reliably up to 150°C, this MOSFET is suitable for automotive (non-automotive standard), industrial controls, power management systems, and other demanding environments.
Maximum continuous drain current: 39 A for high load capability. Voltage rating: 600 V drain-source maximum ensures usage in power electronics. TO-220 package with 3-pin configuration supports easy PCB mounting. Low Rds(on) of 65 mΩ improves energy efficiency.
Power dissipation rating of 50 W allows sustained operation under load. High temperature tolerance to 150°C suits industrial applications. Wide gate voltage range (-30 V to +30 V) supports robust gate control. Compact package size with 15 mm height, 10 mm length, and 4.5 mm width.
Typical gate charge of 110 nC aids in high-speed switching performance.
This MOSFET is well-suited for applications in electronics manufacturing, industrial control systems, power conversion, and switching circuits where durable and efficient semiconductor performance is required.
Explore more in our extensive catalog for complementary semiconductors and electronic components to build reliable and efficient power systems.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 39 A, allowing it to handle moderate to high current loads effectively.
This MOSFET has a maximum drain-source voltage rating of 600 V, which supports its use in high voltage circuits.
It is encapsulated in a TO-220 package type and features a through-hole mounting configuration with 3 pins.
The maximum power dissipation capability of this unit is 50 W, which allows for effective thermal management during operation.
The maximum gate-source voltage range for this MOSFET is from -30 V to +30 V, enabling robust gate control.
The typical gate charge at Vgs=10 V is 110 nC, which aids in achieving rapid switching speeds.
This MOSFET is rated for a maximum operating temperature of 150°C, making it suitable for demanding environments.
The maximum drain-source on-resistance (Rds(on)) is 65 milliohms, which helps minimize power loss during conduction.
The dimensions of this model are 15 mm in height, 10 mm in length, and 4.5 mm in width.
This model is suitable for applications in electronics manufacturing, industrial control systems, power conversion, and switching circuits.
The forward voltage for this device is -1.7 V, which contributes to its effective switching performance.
This model belongs to the DTMOSIV series, which is designed for efficient power switching.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
Recently Viewed Products
$6.14
$5.95
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent