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Infineon OptiMOS 3 N-Channel MOSFET, 70 A Continuous Drain Current, 40 V, TO-220, Enhancement Mode IPP048N04NGXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 15.95mm |
| Length | 10.36mm |
| Model | IPP048N04NGXKSA1 |
| Width | 4.572mm |
| Mount Type | Through Hole |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 70A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 4.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 79W |
| Typical Gate Charge Qg @ Vgs | 31nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 890mV |
Key Features
- Supports a maximum continuous drain current of 70 A for robust performance.
- Features a maximum drain-source voltage rating of 40 V for versatile application.
- Utilizes enhancement mode to improve operational efficiency.
- Low on-resistance of 4.8 mΩ minimizes heat dissipation during operation.
- Maximum power dissipation capacity of 79 W ensures effective thermal management.
- Compatible with a gate voltage swing from -20 V to +20 V for versatile gate driving.
- Designed with a 3-pin TO-220 package optimized for through-hole mounting.
- Operates reliably between -55 °C and +175 °C temperature range for extreme environments.
Product Description
Infineon IPP048N04NGXKSA1 is an OptiMOS 3 Series N-Channel MOSFET designed for high-performance power electronics applications. It delivers a continuous drain current of 70 amperes and supports a maximum drain-source voltage of 40 volts, making it ideal for demanding industrial environments.
This component features a low maximum drain-source resistance of 4.8 milliohms that reduces power loss and heat generation, thereby improving overall system efficiency. Its enhancement mode operation supports swift switching and increased reliability.
The device is capable of dissipating up to 79 watts of power and accommodates wide gate voltage swings from -20 to +20 volts, ensuring versatile gate drive design options. The 3-pin TO-220 package offers convenient through-hole mounting suitable for various PCB layouts.
Operating across a temperature range from -55 °C to +175 °C, this MOSFET is built to withstand harsh industrial and commercial conditions. Typical gate charge of 31 nC at standard gate-source voltage supports improved switching speeds.
Supports up to 70 A continuous drain current. Maximum drain-source voltage rating of 40 V. Low Rds(on) value of 4.8 mΩ for minimal conduction losses. Power dissipation rating of 79 W for effective thermal management. Gate voltage range from -20 V to +20 V for flexible drive options.
Through-hole mounting with 3-pin TO-220 package. Wide operating temperature from -55 °C to +175 °C. Typical gate charge of 31 nC to enhance switching efficiency. Enhancement-mode N-channel design for efficient power control.
Typical applications include power supply circuits in automation and industrial motor control systems, power converters for energy management, and renewable energy solutions requiring high current switching devices. Proper heat dissipation using heat sinks and optimized PCB layouts is recommended for maintaining optimal device performance.
Infineon's OptiMOS 3 series MOSFETs are widely utilized in various industrial, manufacturing, and commercial electronic systems, meeting stringent power density and efficiency standards.
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Frequently Asked Questions
The maximum continuous drain current of this model is 70 A, allowing for robust performance in various applications.
The maximum drain-source resistance (Rds(on)) is 4.8 mΩ, which minimizes conduction losses and heat generation during operation.
It has a maximum power dissipation capacity of 79 W, ensuring effective thermal management during operation.
This unit accommodates a gate voltage swing from -20 V to +20 V, providing flexibility in gate drive design.
It is designed in a 3-pin TO-220 package optimized for through-hole mounting, suitable for various PCB layouts.
This MOSFET operates reliably between -55 °C and +175 °C, making it suitable for extreme environments.
The typical gate charge at standard gate-source voltage is 31 nC, which supports improved switching speeds.
This model features an enhancement mode N-channel design, which enhances operational efficiency and reliability.
The dimensions of this model are 15.95 mm in height, 10.36 mm in length, and 4.572 mm in width.
The country of origin for this MOSFET is India, ensuring compliance with local manufacturing standards.
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