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Toshiba N-Channel MOSFET 72A 120V Enhancement 3-Pin TO-220 TK72E12N1,S1X(S
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 15.1mm |
| Length | 10.16mm |
| Model | TK72E12N1,S1X(S |
| Width | 4.45mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 72A |
| Maximum Drain Source Voltage Vds | 120V |
| Maximum Drain Source Resistance Rds | 4.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 225W |
| Typical Gate Charge Qg @ Vgs | 130nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Operates with a maximum continuous drain current of 72 amperes.
- Maximum drain-source voltage rating of 120 volts ensures robust performance.
- Packaged in a durable TO-220 case with 3 pins for through-hole mounting.
- Features an enhancement mode channel for efficient switching.
- Maximum power dissipation rating is 225 watts allowing high power handling.
- Typical gate charge of 130 nanocoulombs supports fast switching.
- Supports gate-source voltages from -20 volts to +20 volts for device control.
- Operates reliably up to a maximum temperature of 150°C for durability.
Product Description
The Toshiba TK72E12N1,S1X(S is an N-Channel MOSFET designed for power electronics applications requiring high current and voltage handling capabilities. It has a maximum continuous drain current of 72A and can withstand voltages up to 120V, making it suitable for industrial and commercial electronic circuits that require efficient switching and amplification.
This device is housed in a TO-220 package with three pins to facilitate through-hole mounting on printed circuit boards. It employs an enhancement mode channel type which enables it to function effectively as a high-speed switch. With a maximum power dissipation of 225W, this MOSFET can operate under significant load conditions safely.
The typical gate charge of 130nC at Vgs and a maximum gate-source voltage of -20V to +20V allow precise control of the transistor’s switching operations. Additionally, a forward voltage of -1.2V ensures efficient conduction when active.
Its compact physical dimensions (15.1 mm height, 10.16 mm length, and 4.45 mm width) make it adaptable for various electronic designs while sustaining a maximum operating temperature of 150°C, ensuring reliability under demanding thermal conditions.
This MOSFET is sourced from China and follows general manufacturing standards but does not hold specific automotive certifications. It is suitable for applications in industrial electronics, power management, motor control, and general semiconductor circuits.
Operates with a maximum continuous drain current of 72 amperes. Maximum drain-source voltage rating of 120 volts. TO-220 package for easy through-hole mounting. Enhancement mode channel type for effective switching. High power dissipation capacity of 225 watts.
Typical gate charge value of 130 nanocoulombs. Wide gate-source voltage range from -20V to +20V. Compact dimensions suitable for space-constrained designs. Maximum operating temperature of 150°C for robust performance. Manufactured in China adhering to quality standards.
Explore more power semiconductor components and Toshiba MOSFETs in the Electronics & Electricals category on EnvMart for your next industrial or commercial electronics project.
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Frequently Asked Questions
The maximum continuous drain current for this model is 72 amperes.
It has a maximum drain-source voltage rating of 120 volts.
The maximum power dissipation rating is 225 watts, allowing for high power handling.
This model is packaged in a TO-220 case, which is suitable for through-hole mounting.
The typical gate charge is 130 nanocoulombs, which supports fast switching.
It supports gate-source voltages from -20 volts to +20 volts for device control.
The dimensions are 15.1 mm in height, 10.16 mm in length, and 4.45 mm in width.
It operates reliably up to a maximum temperature of 150°C.
This device employs an enhancement mode channel type for efficient switching.
It is suitable for applications in industrial electronics, power management, and motor control.
The TO-220 package has 3 pins for connection.
The forward voltage is -1.2 volts, ensuring efficient conduction when active.
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