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Infineon HEXFET N-Channel Power MOSFET 100 V, 9.4 A Continuous Drain Current, TO-252 Surface Mount, 48 W Pd IRFR120NTRLPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | IRFR120NTRLPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Lead-Free |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 827-4035Brand: InfineonManufacturers Part No.: IRFR120NTRLPBF |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.4A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 210mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 48W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Supports a maximum continuous drain current of 9.4 amperes for robust performance.
- Maximum drain-source voltage rating of 100 volts, suitable for varied voltage conditions.
- Features a compact TO-252 surface mount package with 3 pins for easy PCB integration.
- Low on-resistance of 210 milliohms reduces conduction losses effectively.
- Maximum power dissipation rating of 48 watts enables handling moderate power loads.
- Operates efficiently in temperatures ranging from -55°C to 175°C for industrial environments.
- Enhancement mode N-channel MOSFET with a typical gate charge of 25 nanocoulombs.
- Capable of withstanding gate-source voltages from -20 V to +20 V providing protection flexibility.
Product Description
Infineon IRFR120NTRLPBF is a HEXFET N-Channel power MOSFET optimized for high efficiency power switching applications operating at a maximum drain-source voltage of 100 V and continuous drain current of 9.4 A. The device comes in a compact TO-252 surface mount package featuring a low on-resistance of 210 milliohms, which minimizes conduction losses and maximizes power efficiency.
This enhancement mode MOSFET exhibits a maximum power dissipation capability of 48 W, allowing it to manage moderate power loads in industrial, automotive, and consumer electronics designs. It operates reliably over a wide temperature range from -55°C to 175°C, suitable for demanding environmental conditions.
The gate charge of 25 nC at 25 V gate voltage and the ability to tolerate gate-source voltages from -20 V to +20 V provide designers with flexible drive options and built-in protection against over-voltage stress. The lead-free construction conforms to current environmental regulations, supporting green manufacturing processes.
The IRFR120NTRLPBF is part of Infineon's HEXFET family, known for high performance and power density, and is ideal for applications in switching power supplies, motor control circuits, and power management modules.
Maximum continuous drain current: 9.4 A. Maximum drain-source voltage: 100 V. Package type: TO-252 surface mount. Maximum power dissipation: 48 W. Low on-resistance: 210 milliohms. Operating temperature range: -55°C to 175°C.
Gate charge: 25 nC typical. Gate-source voltage rating: -20 V to +20 V. Lead-free construction. Pin count: 3.
This MOSFET is well suited for industrial, manufacturing, electronics assembly, and power electronics applications, providing efficient switching with reliable thermal and electrical performance. For extended design support, reference to Infineon's technical documentation and standards is recommended.
Explore more Infineon MOSFETs and power semiconductor solutions on EnvMart for your next advanced electronic design requirements.
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Frequently Asked Questions
The maximum continuous drain current of this model is 9.4 A.
It has a maximum drain-source voltage rating of 100 V.
This model comes in a TO-252 surface mount package.
It operates efficiently in temperatures ranging from -55°C to 175°C.
The typical gate charge is 25 nC at a gate voltage of 25 V.
This MOSFET has a maximum power dissipation rating of 48 W.
It features a low on-resistance of 210 milliohms.
The gate-source voltage rating is from -20 V to +20 V.
The TO-252 package has 3 pins.
It has an enhancement mode N-channel configuration.
The country of origin for this model is China.
It is suitable for applications in switching power supplies, motor control circuits, and power management modules.
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