Infineon Isolated HEXFET Dual N/P-Channel MOSFET 3.5 A 25 V Enhancement, 8-Pin SOIC IRF7105TRPBF

Infineon IRF7105TRPBF Dual N/P-Channel MOSFET is an isolated HEXFET power transistor designed in an 8-Pin SOIC surface mount package. It is engineered for efficient switching applications requiring both P-type and N-type channel MOSFETs integrated in one chip, providing space-saving and cost-effective solutions.

The device supports a continuous drain current up to 3.5 A and withstands a maximum drain-source voltage of 25 V which makes it suitable for industrial and electronic power management applications. It exhibits a low drain-source resistance of 400 milliohms, ensuring minimal conduction loss and higher efficiency in switching circuits.

It operates in enhancement mode with a gate voltage range from -20 to +20 volts. The typical gate charge is only 10 nanocoulombs at rated gate-source voltage, facilitating faster switching speeds and reduced electromagnetic interference. Maximum power dissipation rating is 2 watts, supporting effective thermal handling in compact circuit assemblies.

Designed to function reliably across a wide temperature range from -55°C to 150°C, this MOSFET is optimized for demanding industrial environments, including power supplies, motor controllers, and other electronic systems where dual channel switching is required.

The compact physical dimensions (5 mm length, 4 mm width, and 1.5 mm height) and surface mount SOIC package make it ideal for high-density PCB layouts. With two elements per chip, this device maximizes performance efficiency while reducing board space requirements.

Applications include industrial power management, automotive electronics (non-AEC-Q101 compliant), consumer electronics, and other semiconductor integrated circuit boards needing dual N/P channel MOSFETs.

The MOSFET provides enhancement mode operation for efficient switching. Maximum continuous drain current is rated at 3.5 amperes. Maximum drain-source voltage is 25 volts ensuring robust performance. The device features a low maximum drain-source resistance of 400 milliohms.

Supports a wide gate-source voltage range from -20 V to +20 V. Typical gate charge at rated voltage is low at 10 nanocoulombs for fast switching. Maximum power dissipation is 2 watts allowing for reliable thermal management.

Operating temperature range extends from -55°C to 150°C. Package dimensions are compact with length 5 mm, width 4 mm and height 1.5 mm. Designed for surface mount applications in high density circuit designs. This product is a new and original semiconductor device from Infineon manufactured in China.

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