$0.44
$0.43
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon Isolated HEXFET 2 Type P and N-Channel MOSFET, 3.5 A, 30 V, Enhancement Mode, 8-Pin SOIC IRF9952TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | IRF9952TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 3.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 400mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 6.1nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.82V |
| Transistor Configuration | Isolated |
Key Features
- Dual-channel configuration enhances design flexibility in switching applications.
- Surface mount SOIC package simplifies PCB assembly and optimizes space.
- Low on-resistance of 400 mΩ reduces power loss and improves efficiency.
- Operates reliably over a wide temperature range from -55°C to +150°C.
- Maximum gate-source voltage ±20 V ensures robust switching control.
- Typical gate charge of 6.1 nC enables fast switching operations.
- Isolated transistor configuration minimizes cross-talk for clean electrical signals.
- Compact dimensions with length 5 mm, width 4 mm, and height 1.5 mm support compact designs.
Product Description
Infineon IRF9952TRPBF is an isolated HEXFET MOSFET featuring dual-type P and N-channel transistors in a compact 8-pin SOIC surface mount package. Designed for enhancement mode operation, it supports a maximum continuous drain current of 3.5 A and a drain-source voltage of 30 V, making it ideal for various electronic and power management applications.
This device provides low on-resistance (400 mΩ), minimizing conduction losses and enhancing overall power efficiency. The MOSFET's maximum power dissipation rating is 2 W, allowing it to operate reliably under demanding load conditions. Its gate-source voltage rating of ±20 V and typical gate charge of 6.1 nC enable effective and fast switching performance.
The transistor configuration is isolated to reduce interference among channels, ensuring clean signal integrity and preventing unwanted cross-talk. The MOSFET is capable of operating within a wide temperature range from -55°C to +150°C, ensuring durability in extreme environmental conditions. Its compact form factor (5 mm length × 4 mm width × 1.5 mm height) facilitates easy integration on modern PCBs.
This MOSFET is well suited for power management solutions, electric vehicle systems, industrial automation and control, renewable energy systems such as solar inverters, and consumer electronics requiring efficient switching components.
Dual-channel P and N type enhances circuit design options. Surface mount SOIC package enables space-efficient PCB layouts. Low drain-source resistance improves energy efficiency. Wide operating temperature range supports harsh environments.
Isolated configuration prevents cross-talk and signal interference. Rated for ±20 V gate-source voltage for robust switching. Compact size eases integration into tight assemblies. Suitable for automotive, industrial, and renewable energy applications.
Explore EnvMart’s extensive MOSFET product range for reliable semiconductor solutions tailored to industrial, automotive, and consumer electronics needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of this model is 3.5 A.
This MOSFET has a maximum drain-source voltage of 30 V.
The dimensions of this model are 5 mm in length, 4 mm in width, and 1.5 mm in height.
The typical gate charge at Vgs is 6.1 nC.
The maximum gate-source voltage for this model is ±20 V.
It comes in an 8-pin SOIC surface mount package.
The on-resistance is 400 mΩ, which helps reduce power loss.
This model operates reliably over a wide temperature range from -55°C to +150°C.
It is suitable for power management solutions, electric vehicle systems, industrial automation, and renewable energy systems.
This MOSFET features 2 elements per chip, consisting of dual-type P and N-channel transistors.
The maximum power dissipation rating is 2 W.
The channel mode of this model is enhancement mode.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$0.44
$0.43
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent