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Infineon OptiMOS-T2 N-Channel MOSFET, 90 A, 30 V Enhancement Mode, 3-Pin TO-252 IPD90N03S4L02ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.3mm |
| Length | 6.5mm |
| Model | IPD90N03S4L02ATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | OptiMOS-T2 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 90A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 2.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 136W |
| Typical Gate Charge Qg @ Vgs | 110nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 0.9V |
Key Features
- This MOSFET operates in enhancement mode and features a 3-pin TO-252 surface mount package.
- The maximum continuous drain current is 90 amperes, suitable for demanding power applications.
- It has a low on-resistance of 2.6 milliohms, optimizing conduction efficiency.
- Capable of dissipating up to 136 watts of power, supporting high-power density designs.
- Operating temperature range spans from -55°C to 175°C, enabling robust industrial performance.
- Includes automotive standard AEC-Q101 qualification for enhanced reliability in automotive systems.
- Typical gate charge is 110 nanocoulombs at gate-source voltage of 10 V, allowing fast switching.
- Compact dimensions of 6.5 mm length, 6.22 mm width, and 2.3 mm height facilitate space-saving PCB layouts.
Product Description
Infineon IPD90N03S4L02ATMA1 is an advanced OptiMOS-T2 N-Channel MOSFET engineered to deliver high efficiency and power density in power electronics applications. With a maximum continuous drain current of 90 A and a voltage rating of 30 V, it excels in handling demanding electrical loads while maintaining low conduction losses due to its 2.6 milliohm maximum drain-source resistance.
This device uses enhancement mode channel operation and is housed in a TO-252 3-pin surface mount package, which offers compactness and excellent thermal performance for robust circuit designs.
The MOSFET is qualified to automotive standards AEC-Q101, ensuring reliability and superior performance in automotive and industrial environments. Its operating temperature range from -55°C to 175°C allows use in harsh conditions including automotive powertrain and industrial motor control applications.
The typical gate charge of 110 nC at 10 V gate-source voltage supports efficient switching performance in DC-DC converters, power supplies, and battery management systems. The maximum power dissipation of 136 watts enables use in high-power stages while maintaining thermal stability.
Compact physical dimensions of length 6.5 mm, width 6.22 mm, and height 2.3 mm make it suitable for high-density PCB applications where space is premium. The device accepts gate-source voltages up to ±16 V, ensuring compatibility with a wide range of driver circuits.
As a green product compliant with RoHS directives, this MOSFET aligns with modern environmental regulations and sustainability goals. This MOSFET offers excellent energy efficiency for power electronics and automotive applications.
Compact TO-252 surface mount package facilitates space-effective PCB layouts. High maximum continuous current and power dissipation support demanding load conditions. Wide operating temperature range for use in challenging industrial and automotive environments.
Automotive-qualified to AEC-Q101 standard for high reliability and durability. Low gate charge ensures efficient switching performance and reduced power loss. Environmentally friendly RoHS compliance promotes sustainable manufacturing practices.
Infineon's OptiMOS-T2 series extends advanced MOSFET technology to applications requiring volts-class switching and high currents with low losses. This particular model is ideally suited for applications in automotive electronics, industrial motor drives, and energy-efficient power supply circuits.
Explore more in the Semiconductor MOSFET category at EnvMart for detailed technical specifications and related components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 90 amperes, making it suitable for demanding power applications.
This MOSFET has a maximum drain-source voltage rating of 30 volts.
The dimensions of this model are 6.5 mm in length, 6.22 mm in width, and 2.3 mm in height.
It features a maximum drain-source resistance of 2.6 milliohms, optimizing conduction efficiency.
The typical gate charge is 110 nanocoulombs at a gate-source voltage of 10 volts.
The operating temperature range spans from -55°C to 175°C, allowing for robust performance in various environments.
This model is housed in a TO-252 surface mount package, which facilitates compact PCB layouts.
Yes, it includes automotive standard AEC-Q101 qualification, ensuring enhanced reliability in automotive systems.
The maximum power dissipation is 136 watts, supporting high-power density designs.
The maximum gate-source voltage is ±16 volts, allowing compatibility with a variety of driver circuits.
This device uses an enhancement mode N-channel configuration, suitable for various power electronics applications.
The country of origin for this model is India.
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