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Infineon OptiMOS P Type P-Channel MOSFET 100 A 30 V Enhancement Mode 8-Pin TDSON BSC060P03NS3EGATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 6.35mm |
| Model | BSC060P03NS3EGATMA1 |
| Width | 5.35mm |
| Mount Type | Surface |
| Series | OptiMOS P |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 9.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | 61nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -1.1V |
Key Features
- This MOSFET supports a maximum continuous drain current of 100A.
- It has a maximum drain-source voltage rating of 30V suitable for low-voltage power stages.
- The device features a low on-resistance of 9.6mΩ to reduce conduction losses.
- Maximum power dissipation of 83W allows for significant power handling.
- Typical gate charge is 61nC enabling efficient switching control.
- Operates in enhancement mode with a P-type channel.
- Package height is 1.1mm ensuring a compact, low-profile design.
- Operating temperature range from -55°C up to 150°C accommodates demanding thermal environments.
Product Description
Infineon BSC060P03NS3EGATMA1 is an OptiMOS P Type P-Channel MOSFET designed for high-current, low-voltage electronic power switching applications. This device comes in an 8-pin TDSON surface-mount package measuring 6.35mm in length, 5.35mm in width, and 1.1mm in height, providing a compact footprint for dense PCB layouts.
Capable of handling a continuous drain current of 100A and a drain-source voltage of 30V, this MOSFET enables efficient power stage designs with minimal conduction losses thanks to its low 9.6mΩ on-resistance. The typical gate charge of 61nC supports controlled switching speed, optimizing power efficiency and thermal performance.
Operating in enhancement mode with a P-type channel, the device is ideally suited for synchronous buck converters, DC motor drives, point-of-load regulators in servers and telecom, battery management systems, and high-current load switches on compact PCBs.
The maximum power dissipation rating of 83W and wide operating temperature range from -55°C to 150°C ensure reliability in industrial, automotive, and commercial environments subjected to thermal stresses. Its ±25V gate-source voltage rating provides a safe margin for robust gate drive operation.
100A continuous drain current enables sustained high-current switching. 30V drain-source rating supports low-voltage power stages. 9.6mΩ Rds(on) reduces conduction losses and heat generation. 83W maximum power dissipation permits significant power handling.
61nC typical gate charge allows controlled switching dynamics. Enhancement mode operation with P-type channel suitable for various power topologies. Compact 8-pin TDSON package with 1.1mm height for space-constrained designs.
Wide operating temperature range from -55°C to 150°C for demanding environments. Robust ±25V maximum gate-source voltage for reliable gate control.
This MOSFET is a reliable choice for electronic engineers designing power-efficient and high-performance switching applications in industrial, automotive, data center, and telecommunications sectors. Its optimized combination of current capacity, voltage rating, and compact packaging makes it well-suited for modern electronic component assemblies.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100A.
This MOSFET has a maximum drain-source voltage rating of 30V.
It features a low on-resistance of 9.6mΩ, which helps reduce conduction losses.
The device comes in an 8-pin TDSON package, measuring 6.35mm in length, 5.35mm in width, and 1.1mm in height.
The typical gate charge is 61nC, which enables efficient switching control.
It operates within a temperature range from -55°C to 150°C, suitable for demanding thermal environments.
The maximum power dissipation rating is 83W, allowing for significant power handling.
This model features a P-type channel and operates in enhancement mode.
The maximum gate-source voltage rating is ±25V, providing a safe margin for robust gate drive operation.
It is suitable for synchronous buck converters, DC motor drives, point-of-load regulators, and battery management systems.
The country of origin for this MOSFET is India.
This device has a pin count of 8.
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