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DiodesZetex NPN Bipolar Transistor 50 mA 25 V 3-Pin SOT-23 MMBTH10-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model MMBTH10-7-F
Width 2.5mm
Mount Type Surface
Series MMBT
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 25V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 3V
Maximum Collector Base Voltage VCBO 30V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 50mA
Transistor Configuration Single
Maximum Transition Frequency ft 650MHz

Key Features

  • This transistor uses a 3-pin SOT-23 package designed for surface mount applications.
  • It operates with a maximum power dissipation of 300 mW, suitable for low-power circuits.
  • The device supports a maximum collector base voltage of 30 V and emitter base voltage of 3 V.
  • Minimum DC current gain (hFE) is 60, with a maximum transition frequency of 650 MHz for high-frequency applications.
  • It operates reliably in temperature ranges from -55°C to 150°C, meeting AEC-Q101 automotive standards.
  • The compact dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height for efficient PCB footprint.

Product Description

DiodesZetex MMBTH10-7-F NPN Bipolar Transistor is a high-performance semiconductor device designed for electronic circuits requiring low power and high frequency operation. It features a maximum DC collector current rating of 50 mA and operates up to a collector-emitter voltage of 25 V. Packaged in a compact 3-pin SOT-23 surface mount package, it is ideal for space-constrained PCB designs.

With a maximum power dissipation of 300 mW, this transistor is suitable for applications such as switching and amplification in electronic components, power connectors, and embedded systems. The transistor's minimum DC current gain (hFE) of 60 and a maximum transition frequency of 650 MHz allow efficient high-frequency performance in communication and signal processing circuits.

It adheres to AEC-Q101 automotive standards, indicating robust reliability suitable for automotive and industrial applications. The device is rated to operate within a broad temperature range from -55°C to 150°C, enabling its use in harsh environments.

The compact footprint with length 3 mm, width 2.5 mm, and height 1.1 mm ensures easy PCB mounting and integration in complex assemblies. This transistor's single transistor configuration and NPN polarity make it versatile for numerous electronic circuit designs, including control, amplification, and switching tasks.

This transistor package is optimized for surface mount technology allowing automated assembly. The device ensures enhanced performance in automotive, industrial, communications, and consumer electronics. It is compliant with modern semiconductor manufacturing standards, ensuring quality and reliability.

Widely used for low to medium current applications within electronic components sectors. Explore the range of DiodesZetex transistors and other semiconductor products at EnvMart for reliable electronic components tailored to industrial and commercial needs.

Explore more products in our Bipolar Transistors category.

DiodesZetex NPN Bipolar Transistor 50 mA 25 V 3-Pin SOT-23 MMBTH10-7-F
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Frequently Asked Questions

The maximum DC collector current rating for this NPN transistor is 50 mA.

This model operates up to a maximum collector-emitter voltage of 25 V.

It is packaged in a compact 3-pin SOT-23 surface mount package.

The maximum power dissipation for this transistor is 300 mW.

The minimum DC current gain (hFE) is 60.

It has a maximum transition frequency of 650 MHz, suitable for high-frequency applications.

This model operates reliably in temperature ranges from -55°C to 150°C.

It meets the AEC-Q101 automotive standards, indicating its reliability for automotive applications.

The dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

The maximum emitter-base voltage (VEBO) is 3 V.

It has a single transistor configuration with NPN polarity.

Yes, it is designed for surface mount applications, making it ideal for space-constrained PCB designs.

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