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onsemi Power NPN Transistor, 7 A, 100 V, 3-Pin TO-220, Through Hole Mount KSC2334YTU

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onsemi Power NPN Transistor, 7 A, 100 V, 3-Pin TO-220, Through Hole Mount KSC2334YTU

Name: onsemi Power NPN Transistor, 7 A, 100 V, 3-Pin TO-220, Through Hole Mount KSC2334YTU
Brand: onsemi
SKU: 132619
Price: 0.8 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	28.67mm
Length	9.9mm
Model	KSC2334YTU
Width	4.5mm
Mount Type	Through Hole
Series	KSC2334
Maximum Operating Temperature	150°C
Package Type	TO-220
Pin Count	3
Maximum Collector Emitter Voltage Vceo	100V
Minimum DC Current Gain hFE	40
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	7V
Maximum Collector Base Voltage VCBO	150V
Maximum Power Dissipation Pd	40W
Maximum DC Collector Current Idc	7A
Transistor Configuration	Single

Key Features

This transistor supports a maximum collector current of 7 Amperes.
It has a collector-emitter voltage rating of 100 Volts.
The device is housed in a TO-220 package suitable for through hole mounting.
Featuring a minimum current gain (hFE) of 40 for efficient amplification.
Maximum power dissipation is ranked at 40 Watts for reliable operation.
Designed as a single configuration NPN transistor for various semiconductor applications.
The maximum operating temperature reaches up to 150°C.
The device includes three pins facilitating easy integration in circuits.

Product Description

onsemi KSC2334YTU Power NPN Transistor is a 3-pin TO-220 packaged device designed for high current and voltage applications with robust thermal dissipation capabilities. It features a maximum DC collector current (Idc) of 7 A and a maximum collector-emitter voltage (Vceo) of 100 V, making it well-suited for discrete semiconductor use cases in industrial electronics.

The transistor is configured as a single NPN polarity type with a minimum DC current gain (hFE) of 40, and it supports a maximum power dissipation of 40 W which ensures stable performance under demanding conditions. It includes a maximum collector-base voltage (VCBO) of 150 V and a maximum emitter-base voltage (VEBO) of 7 V.

Its TO-220 package and through-hole mount provide mechanical and thermal robustness, with physical dimensions measuring approximately 28.67 mm in height, 9.9 mm in length, and 4.5 mm in width. The transistor is rated for maximum operating temperatures up to 150°C.

This transistor is ideal for applications in discrete semiconductor circuits, power amplification, and various industrial electronic assemblies requiring reliable switching and amplification.

This transistor supports a maximum collector current of 7 Amperes. Collector-emitter voltage rating of 100 Volts ensures high voltage operation. TO-220 package allows for efficient heat dissipation and through hole mounting.

High power dissipation capability of 40 Watts for robust performance. Single NPN transistor configuration offers versatile use in circuits. Minimum current gain (hFE) of 40 for dependable amplification. Maximum operating temperature up to 150°C ensures reliability.

Compact physical dimensions facilitate integration in compact PCB layouts. Lacks automotive standard approval, suitable for a range of commercial and industrial electronics.

Utilize this onsemi transistor to enhance electronic circuit efficiency in industrial, manufacturing, and electronic component applications. Explore our complete selection of Bipolar Transistors for optimized device matching at EnvMart.