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Toshiba P-Channel MOSFET 10 A 30 V Enhancement 8-Pin SOP TPC8125
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 1.52mm |
| Length | 4.9mm |
| Model | TPC8125 |
| Width | 3.9mm |
| Mount Type | Surface |
| Series | TPC |
| Maximum Operating Temperature | 150°C |
| Package Type | SOP |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 17mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.9W |
| Typical Gate Charge Qg @ Vgs | 64nC |
| Maximum Gate Source Voltage Vgs | -25, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- The MOSFET operates in enhancement mode with a typical gate charge of 64 nC.
- It provides a low maximum drain-source resistance of 17 mΩ, enabling efficient power control.
- The device supports a maximum gate-source voltage rating of -25 V to +20 V.
- Maximum power dissipation is rated at 1.9 W, suitable for compact power applications.
- Forward voltage drop is low at 1.2 V for minimal conduction losses.
- Physical dimensions include length of 4.9 mm, width of 3.9 mm, and height of 1.52 mm.
- Designed for surface mount technology with an 8-pin configuration suitable for PCB integration.
- Maximum operating temperature reaches up to 150°C, fitting for demanding thermal conditions.
Product Description
Toshiba TPC8125 is a P-Channel MOSFET designed for efficient power switching applications with a maximum continuous drain current of 10 amperes and a maximum drain-source voltage of 30 volts. Encapsulated in an 8-pin SOP (Small Outline Package), this enhancement-mode MOSFET offers low on-resistance and high reliability.
This semiconductor device features a maximum drain-source resistance (Rds) of 17 milliohms, ensuring low conduction losses and improving energy efficiency in compact electronic circuits. The typical gate charge is 64 nanocoulombs at the gate-source voltage, optimizing switching performance.
The MOSFET supports a maximum gate-source voltage range from -25 V to +20 V, allowing flexible control signals for switching. With a maximum power dissipation of 1.9 watts, the TPC8125 is suitable for applications requiring moderate power handling within tight space constraints.
Physical dimensions are 4.9 mm in length, 3.9 mm in width, and 1.52 mm in height, making it compatible with surface mount technology designs. The device operates reliably up to a maximum temperature of 150°C, making it appropriate for industrial, electronic, and automotive systems with demanding thermal environments.
TPC8125 is widely used in power management circuits, DC-DC converters, load switching, and other electronic control units in consumer electronics, industrial equipment, and embedded systems.
The MOSFET operates in enhancement mode with low Rds for efficient switching. Supports 10 A drain current for robust power applications. Compact 8-pin SOP surface mount package. High-temperature operation up to 150°C. Typical gate charge of 64 nC enables fast switching.
Low forward voltage reduces power losses. Applicable in industrial, laboratory, and automotive environments. Designed for high reliability and long operational life. Explore more Toshiba semiconductors, MOSFETs, and power devices at EnvMart for your industrial and commercial electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10 amperes.
The maximum drain-source voltage rating is 30 volts.
The maximum power dissipation is rated at 1.9 watts.
The physical dimensions are 4.9 mm in length, 3.9 mm in width, and 1.52 mm in height.
The maximum operating temperature reaches up to 150°C.
The typical gate charge is 64 nanocoulombs.
This model uses an 8-pin SOP (Small Outline Package) for surface mount technology.
The maximum gate-source voltage range is from -25 V to +20 V.
The maximum drain-source resistance is 17 milliohms.
This MOSFET is suitable for power management circuits, DC-DC converters, and load switching in various electronic control units.
The forward voltage drop is low at 1.2 volts, which helps in minimizing conduction losses.
This model features a P-Channel type for enhancement mode operation.
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