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| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 2.3mm |
| Length | 6.5mm |
| Model | 2SB1201S-TL-E |
| Width | 7mm |
| Mount Type | Surface |
| Series | 2SB1201S |
| Maximum Operating Temperature | 150°C |
| Package Type | TP-FA |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -50V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -6V |
| Maximum Collector Base Voltage VCBO | -60V |
| Maximum Power Dissipation Pd | 15W |
| Maximum DC Collector Current Idc | -2A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 150MHz |
onsemi 2SB1201S-TL-E is a high-performance PNP transistor packaged in a TP-FA 3-pin surface mount format, suitable for a wide range of electronic and industrial applications including power amplification and switching.
This transistor supports a maximum DC collector current of 2 A and collector-emitter voltage rating of 50 V, making it suitable for moderate power electronics circuits. With a maximum power dissipation of 15 W, the component ensures reliable thermal performance in demanding environments.
The device operates efficiently across a wide temperature range from -55°C up to 150°C, making it compatible with industrial and automotive-grade temperature requirements. It demonstrates a minimum DC current gain (hFE) of 40 and a maximum transition frequency of 150 MHz, suitable for high-speed switching and amplification.
The compact dimensions of 6.5 mm length, 7 mm width, and 2.3 mm height enable flexible PCB design integration. The transistor is surface mount type, simplifying assembly and improving production efficiency. 3-pin TP-FA package ensures easy surface mounting.
General purpose PNP transistor designed for a variety of power and switching applications. Reliable operation within a broad temperature range from -55°C to 150°C. Maximum collector current rating of 2 A and collector-emitter voltage of 50 V.
Power dissipation capacity of 15 W. High transition frequency of 150 MHz for effective switching. Minimum DC current gain of 40 for amplification tasks. Compact size benefits space-constrained design applications. This transistor is optimized for industrial, laboratory, and electronic manufacturing uses where high performance and reliability are essential.
Explore more from the onsemi 2SB series to meet your semiconductor device requirements with confidence at EnvMart.
Explore more products in our Bipolar Transistor category.
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