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onsemi PNP Power Transistor TO-220 Package 15A 80V 75W 3-Pin 2N6491G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.18mm
Length 10.53mm
Model 2N6491G
Width 4.83mm
Mount Type Through Hole
Series 2N6491
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -80V
Minimum DC Current Gain hFE 5
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 90V dc
Maximum Power Dissipation Pd 75W
Maximum DC Collector Current Idc -15A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • This transistor supports a maximum DC collector current of 15 amperes.
  • The maximum collector emitter voltage rating is 80 volts.
  • It features a through hole mount type for secure PCB installation.
  • Maximum power dissipation capability of 75 watts for robust performance.
  • Designed for operation from -65°C up to 150°C.
  • It has a minimum DC current gain of 5 and a maximum transition frequency of 1 MHz.
  • The transistor is a PNP configuration with 3 pins in a TO-220 package.
  • Its dimensions are approximately 10.53mm in length, 4.83mm in width, and 1.18mm in height.

Product Description

onsemi 2N6491G is a robust PNP Power Transistor housed in a TO-220 package, rated for a maximum DC collector current of 15 amperes and a collector emitter voltage of 80 volts. It supports a maximum power dissipation of 75 watts, making it suitable for various power amplification and switching applications in industrial and consumer electronics.

This transistor features a through hole mount design and a 3-pin configuration, allowing easy integration into PCB designs requiring high reliability and thermal management. Its operating temperature range from -65°C to 150°C ensures stable performance under demanding environmental conditions.

With a minimum DC current gain (hFE) of 5 and a maximum transition frequency (ft) of 1 MHz, the 2N6491G is well-suited for medium-frequency power switching and amplification tasks. Dimensions approximate to 10.53 mm in length, 4.83 mm in width, and 1.18 mm in height provide compact yet efficient form factor integration.

This transistor supports a maximum DC collector current of 15 amperes. The maximum collector emitter voltage rating is 80 volts. It features a through hole mount type for secure PCB installation. Maximum power dissipation capability of 75 watts for robust performance.

Designed for operation from -65°C up to 150°C. It has a minimum DC current gain of 5 and a maximum transition frequency of 1 MHz. The transistor is a PNP configuration with 3 pins in a TO-220 package. Its dimensions are approximately 10.53mm in length, 4.83mm in width, and 1.18mm in height.

Ideal for applications requiring high power PNP transistors. Explore the wide range of semiconductors and bipolars transistors available on EnvMart for your electronic projects and industrial applications.

Explore more products in our Bipolar Transistors category.

onsemi PNP Power Transistor TO-220 Package 15A 80V 75W 3-Pin 2N6491G
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Frequently Asked Questions

The maximum DC collector current for this model is 15 amperes.

The maximum collector emitter voltage rating is 80 volts.

It has a maximum power dissipation capability of 75 watts.

This model operates within a temperature range of -65°C to 150°C.

The minimum DC current gain (hFE) is 5.

The maximum transition frequency is 1 MHz.

It features a through hole mount type for secure PCB installation.

The dimensions are approximately 10.53 mm in length, 4.83 mm in width, and 1.18 mm in height.

The transistor is housed in a TO-220 package.

The maximum emitter base voltage (VEBO) is 5 volts.

It has a PNP configuration with 3 pins.

The maximum collector base voltage (VCBO) rating is 90 volts DC.

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