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Vishay Isolated TrenchFET Dual Type P and Type N Channel MOSFET 6A, 30V, 8-Pin SOIC SI4532CDY-T1-GE3

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Vishay Isolated TrenchFET Dual Type P and Type N Channel MOSFET 6A, 30V, 8-Pin SOIC SI4532CDY-T1-GE3

Name: Vishay Isolated TrenchFET Dual Type P and Type N Channel MOSFET 6A, 30V, 8-Pin SOIC SI4532CDY-T1-GE3
Brand: Vishay
SKU: 131616
Price: 0.45 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	1.5mm
Length	5mm
Model	SI4532CDY-T1-GE3
Width	4mm
Mount Type	Surface
Series	TrenchFET
Maximum Operating Temperature	+150°C
Package Type	SOIC
Minimum Operating Temperature	-55°C
Pin Count	8
Number of Elements per Chip	2
Channel Type	Type P, Type N
Maximum Continuous Drain Current Id	6A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	140mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2.78W
Typical Gate Charge Qg @ Vgs	6nC
Maximum Gate Source Voltage Vgs	-20, +20V
Transistor Configuration	Isolated

Key Features

Dual N and P channel MOSFET configuration for versatile applications.
Maximum continuous drain current of 6 amperes supports medium power switching.
Drain-source voltage rating of 30 volts for stable operation under load.
Low maximum drain-source resistance of 140 milliohms for efficient conduction.
High maximum power dissipation of 2.78 watts ensures reliable thermal performance.
Enhancement mode channel operation suited for switching applications.
Wide operating temperature range from -55°C to +150°C for robust environmental tolerance.
Compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height in SOIC package.

Product Description

Vishay SI4532CDY-T1-GE3 is a dual isolated TrenchFET MOSFET combining both Type P and Type N channel transistors in a single device. This MOSFET transistor is designed for power switching and enhancement mode applications, delivering a maximum continuous drain current of 6 amperes and withstanding drain-source voltages up to 30 volts, packaged in an 8-pin SOIC form factor.

The device features a low maximum drain-source resistance of 140 milliohms which helps reduce conduction losses, providing efficient operation in electronic circuits. It has a maximum power dissipation rating of 2.78 watts, making it suitable for moderate power levels. The transistor supports a wide gate-source voltage of -20 V to +20 V and a typical gate charge of 6 nanocoulombs at a specified gate voltage, enabling effective switching performance.

With robust operating temperature limits from -55°C to +150°C, this component is engineered for reliable performance in demanding industrial, automotive, and electronic manufacturing environments. The isolated transistor configuration separates the P and N channel elements for improved design flexibility and noise immunity.

The compact SOIC package with dimensions 5 mm length, 4 mm width, and 1.5 mm height is optimized for surface mount technology (SMT) assembly, allowing high-density circuit board layouts.

Dual N/P channel MOSFET device for diverse power switching needs. Maximum drain current: 6 A for medium power applications. Drain-source voltage rating: 30 V to support a range of circuits. Low on-resistance (Rds(on)) enhances conduction efficiency.

Wide operating temperature range to withstand harsh environments. 8-pin SOIC surface mount package ensures compact installation. Typical gate charge conducive to fast switching speeds. Isolated configuration reduces interference between elements.

This Vishay MOSFET is ideal for applications in electronic components, power management, industrial equipment manufacturing, and automotive systems requiring efficient and reliable transistor switching. It is compliant with standard electronic component requirements but does not incorporate automotive or other specific certifications.

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Frequently Asked Questions

The maximum continuous drain current for this model is 6 amperes, making it suitable for medium power switching applications.

This MOSFET has a drain-source voltage rating of 30 volts, allowing it to operate effectively under load conditions.

The maximum power dissipation for this MOSFET is 2.78 watts, ensuring reliable thermal performance during operation.

The SOIC package of this model has dimensions of 5 mm in length, 4 mm in width, and 1.5 mm in height.

The typical gate charge for this model is 6 nanocoulombs at the specified gate voltage, facilitating effective switching performance.

This MOSFET operates within a temperature range from -55°C to +150°C, making it suitable for harsh environmental conditions.

The SI4532CDY-T1-GE3 features a dual configuration with both Type P and Type N channel transistors in a single device.

The maximum drain-source resistance (Rds(on)) for this MOSFET is 140 milliohms, which enhances conduction efficiency.

This model is designed for surface mount technology (SMT) assembly, allowing for compact circuit board layouts.

The maximum gate-source voltage for this model is -20V to +20V, which supports a wide range of applications.

This MOSFET has a total of 8 pins, which is typical for its SOIC package type.

This MOSFET is suitable for applications in electronic components, power management, industrial equipment, and automotive systems requiring efficient transistor switching.