onsemi 7 Darlington Transistor NPN, 500 mA, 50V, HFE:1000, 16-Pin SOIC ULQ2003ADR2G

onsemi ULQ2003ADR2G is a 7-element NPN Darlington Transistor designed for discrete semiconductor applications. Featuring a robust maximum continuous collector current of 500 mA and a maximum collector-emitter voltage of 50 V, this transistor supports efficient power handling in compact circuits.

Housed in a 16-pin Small Outline Integrated Circuit (SOIC) surface mount package measuring 10 mm in length and 1.75 mm in height, it is well suited for space-constrained printed circuit board designs. The transistor delivers a high minimum DC current gain (hFE) of 1000, enabling amplified signal performance in switching and amplification circuits.

It operates reliably over a temperature range of -40°C to 85°C, making it suitable for industrial, electronic components manufacturing, and power supply applications. The maximum collector-emitter saturation voltage of 1.6 V ensures minimal voltage drop during conduction.

Constructed with Pb-Free materials, this component complies with environmental standards and is ideal for use in various electronics assemblies but is not automotive qualified as per AEC-Q101.

7-element NPN Darlington Transistor configuration. Voltage rating of 50 V and current capacity of 500 mA. Compact 16-pin SOIC package for surface mounting. High gain hFE of 1000 for efficient amplification. Operational temperature range accommodates harsh environments.

Pb-Free compliant environmental profile.

This transistor is frequently used in power amplification, switching applications, and discrete semiconductor assemblies in industrial and electronic manufacturing environments. For full technical documentation, PCB footprint, and electrical characteristics, refer to onsemi datasheets and design resources.

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