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onsemi Transistor 2 A NPN 40 V DC 3-Pin SOT-23 NSS40201LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model NSS40201LT1G
Width 2.64mm
Mount Type Surface
Series e2PowerEdge
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 40V dc
Minimum DC Current Gain hFE 180
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 40V dc
Maximum Power Dissipation Pd 460mW
Maximum DC Collector Current Idc 2A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
Nexperia PBSS4240T,215 Transistor, 2 A NPN, 40 V, 3-Pin SOT-23Brand Nexperia

Key Features

  • This transistor supports a maximum DC collector current of 2 amperes.
  • It has a maximum collector emitter voltage rating of 40 volts DC.
  • The transistor package type is compact SOT-23 with 3 pins.
  • Designed for single transistor configuration and surface mount technology mounting type.
  • Offers a minimum DC current gain (hFE) of 180 for efficient current amplification.
  • The maximum power dissipation is rated at 460 milliwatts, suitable for general purpose use.
  • Supports a maximum transition frequency of 100 MHz for high-speed switching.
  • Operating temperature range is broad from -55°C up to 150°C, accommodating harsh environments.

Product Description

onsemi NSS40201LT1G is a general-purpose NPN bipolar transistor designed for switching and amplification applications in electronic circuits.

The device features a maximum collector current of 2 amps and can withstand a collector emitter voltage of up to 40 volts DC, making it suitable for moderate power electronic devices.

Packaged in a compact SOT-23 surface mount package with 3 pins, it offers optimized footprint in circuit board designs. The transistor provides a minimum current gain (hFE) of 180, ensuring effective amplification in low to medium frequency circuits up to 100 MHz transition frequency.

Its power dissipation rating is 460 mW, balanced for typical general-purpose semiconductor requirements. The operating temperature range from -55°C to 150°C allows reliable performance even in industrial and harsh environments.

This transistor is ideal for use in industrial electronic equipment, power management modules, control systems, and other semiconductor applications requiring compact and reliable switching elements.

This transistor supports a maximum DC collector current of 2 amperes. It has a maximum collector emitter voltage rating of 40 volts DC. The transistor package type is compact SOT-23 with 3 pins. Designed for single transistor configuration and surface mount technology mounting type.

Offers a minimum DC current gain (hFE) of 180 for efficient current amplification. The maximum power dissipation is rated at 460 milliwatts, suitable for general purpose use. Supports a maximum transition frequency of 100 MHz for high-speed switching.

Operating temperature range is broad from -55°C up to 150°C, accommodating harsh environments. Dimensions are approximately 3.04 mm length, 2.64 mm width, and 1.11 mm height. These transistors are not automotive standard certified but comply with general industrial requirements.

Explore our wide range of Bipolar Transistors and electronic components at EnvMart for your design and manufacturing needs.

onsemi Transistor 2 A NPN 40 V DC 3-Pin SOT-23 NSS40201LT1G
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Frequently Asked Questions

The maximum DC collector current of this transistor is 2 amperes.

It has a maximum collector-emitter voltage rating of 40 volts DC.

This model is packaged in a compact SOT-23 with 3 pins, designed for surface mount technology.

The transistor offers a minimum DC current gain (hFE) of 180, which is suitable for efficient current amplification.

The maximum power dissipation for this transistor is rated at 460 milliwatts.

It supports a maximum transition frequency of 100 MHz, making it suitable for high-speed switching applications.

The operating temperature range is from -55°C to 150°C, accommodating harsh environments.

The dimensions are approximately 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

This transistor is suitable for use in industrial electronic equipment, power management modules, and control systems.

The transistor is designed for a single transistor configuration.

The maximum emitter-base voltage (VEBO) rating is 6 volts.

The country of origin for this product is India.

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