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onsemi Small Signal NPN Transistor, 500 mA Collector Current, 80 V Collector-Emitter Voltage, 3-Pin SOT-23 MMBTA06LT3G

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onsemi Small Signal NPN Transistor, 500 mA Collector Current, 80 V Collector-Emitter Voltage, 3-Pin SOT-23 MMBTA06LT3G

Name: onsemi Small Signal NPN Transistor, 500 mA Collector Current, 80 V Collector-Emitter Voltage, 3-Pin SOT-23 MMBTA06LT3G
Brand: onsemi
SKU: 131299
Price: 0.03 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.11mm
Length	3.04mm
Model	MMBTA06LT3G
Width	2.64mm
Mount Type	Surface
Series	MMBTA06L
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	80V dc
Minimum DC Current Gain hFE	100
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	4V
Maximum Collector Base Voltage VCBO	80V dc
Maximum Power Dissipation Pd	225mW
Maximum DC Collector Current Idc	500mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

The transistor features a 3-pin SOT-23 surface mount package ideal for compact PCB designs.
Maximum collector dissipation is rated at 225 mW, suitable for small signal tasks.
Operating frequency is up to 100 MHz, enabling high-speed switching and amplification.
It supports a minimum DC current gain (hFE) of 100 for stable performance.
Operating temperature ranges from -55°C to +150°C, ensuring durability in various environments.
Pin count of 3 enables simple integration in electronic circuits.
This transistor has a maximum emitter-base voltage of 4 V and maximum collector-base voltage of 80 V.
The product is new and non-automotive grade, designed primarily for electronic component uses.

Product Description

onsemi MMBTA06LT3G Small Signal NPN Transistor offers reliable performance for low power amplification and switching functions in electronic circuits. Designed in a compact 3-pin SOT-23 surface mount package, it fits well in modern densely packed PCB layouts typically found in consumer electronics, industrial control systems, and instrumentation.

This transistor supports a maximum DC collector current of 500 mA and can withstand collector-emitter voltages up to 80 V, making it suitable for moderate voltage single-stage amplification or switching applications. The device power dissipation rating of 225 mW accommodates common low-power tasks without excessive heat generation.

With an operating frequency up to 100 MHz and a minimum current gain of 100, the MMBTA06LT3G transistor ensures efficient signal amplification and switching speed for various analog and digital electronic applications.

Robust thermal specifications - operating between -55°C and 150°C - allow dependable functioning even in harsh environmental conditions encountered in industrial, commercial, or laboratory settings.

The transistor features a 3-pin SOT-23 surface mount package suitable for automated mounting processes. Compact dimensions of length 3.04 mm, width 2.64 mm, and height 1.11 mm optimize PCB real estate usage. Maximum collector base voltage is rated at 80 V with an emitter base maximum voltage of 4 V, providing good tolerance against typical circuit stresses.

Non-automotive grade but engineered for small signal semiconductor applications in electronics manufacturing, telecommunications, and consumer devices. Offers stable gain and switching reliability across its frequency band up to 100 MHz.

This transistor is essential for applications requiring precise small signal switching and amplification in electronics development, manufacturing, and repair. Its versatility spans industrial automation, communication devices, instrumentation, and general electronics courses and labs.

Explore a wide range of onsemi semiconductor components in our Bipolar Transistors category at EnvMart to meet diverse electronic circuit needs.

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Frequently Asked Questions

The maximum DC collector current for this transistor is 500 mA.

It supports an operating frequency of up to 100 MHz, enabling high-speed switching and amplification.

This model comes in a 3-pin SOT-23 surface mount package, suitable for compact PCB designs.

The dimensions are 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

The maximum collector-emitter voltage (Vceo) is rated at 80 V.

It has a minimum DC current gain (hFE) of 100, ensuring stable performance.

The maximum power dissipation is rated at 225 mW, suitable for low power tasks.

The operating temperature range is from -55°C to +150°C, allowing for use in various environments.

The maximum emitter-base voltage (VEBO) is 4 V.

This transistor is suitable for low power amplification and switching functions in electronic circuits, including consumer electronics and industrial control systems.

It is an NPN bipolar transistor designed for small signal applications.

This model features a pin count of 3, facilitating simple integration into electronic circuits.