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Infineon OptiMOS P Type P-Channel MOSFET 40 A 30 V Enhancement 8-Pin TSDSON BSZ086P03NS3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 3.4mm |
| Model | BSZ086P03NS3GATMA1 |
| Width | 3.4mm |
| Mount Type | Surface |
| Series | OptiMOS P |
| Maximum Operating Temperature | 150°C |
| Package Type | TSDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 69W |
| Typical Gate Charge Qg @ Vgs | 43.2nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | -1.1V |
Key Features
- Operates efficiently at industrial temperature ranges from -55°C to 150°C.
- Provides a low on-state resistance of 13.4 milliohms to reduce conduction losses.
- Supports a maximum power dissipation of 69 W for thermal management.
- Features typical gate charge of 43.2 nanocoulombs balancing switching speed and drive requirements.
- Has maximum gate-source voltage rating of 25 V for robust gate drive margins.
- Compact 3.4 mm x 3.4 mm package with low height of 1.1 mm for space-constrained applications.
- Ideal for synchronous buck converters and motor control drive stages.
- Used in telecoms, server power systems, battery management, and compact power modules.
Product Description
Infineon BSZ086P03NS3GATMA1 is a P-Channel enhancement mode MOSFET specifically engineered for surface-mount power switching in industrial environments. Its 30 V drain-source voltage rating and 40 A continuous drain current capability make it suitable for high-current switching roles with efficiency and thermal robustness.
This device is housed in an 8-pin thin small-outline package (TSDSON) with a compact footprint of 3.4 mm length and width, and a low profile height of 1.1 mm. Such a design allows for dense assembly and space savings in modern electronics.
It features a low on-resistance of 13.4 mΩ, which reduces conduction losses, and a typical gate charge of 43.2 nC matched for balanced switching speeds and drive requirements. The MOSFET tolerates gate-source voltages up to 25 V, ensuring rugged operational reliability.
Designed to function reliably over a wide temperature range from -55°C up to 150°C, the device is ideal for various industrial, telecommunications, and power management applications.
Operates from -55°C to 150°C for harsh industrial conditions. Low Rds(on) at 13.4 mΩ for efficient conduction. Handles a maximum continuous drain current of 40 A. Maximum power dissipation of 69 W supports thermal load. Compact 8-pin TSDSON package supports automated assembly.
Typical gate charge of 43.2 nC balances speed and drive currents. Maximum gate-source voltage rating of 25 V enhances robustness. Applications in synchronous buck converters, DC motor control, telecoms, server power, and battery management.
This MOSFET supports demanding power switching applications where compact form factors, efficiency, and wide temperature operation are critical. It is suitable for manufacturing, industrial automation, and power supply designs requiring reliable, high-current P-Channel MOSFET solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 40 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
It features a low on-state resistance of 13.4 milliohms, which helps reduce conduction losses.
The package dimensions are 3.4 mm in length and width, with a height of 1.1 mm.
The typical gate charge is 43.2 nanocoulombs, balancing switching speed and drive requirements.
This model supports a maximum power dissipation of 69 W for effective thermal management.
It operates efficiently over a temperature range from -55°C to 150°C.
The maximum gate-source voltage rating is 25 V, providing robust gate drive margins.
It is ideal for applications such as synchronous buck converters, motor control, and battery management.
This model has a total of 8 pins in its package.
It features a P-Channel enhancement mode for its operation.
The country of origin for this MOSFET is India.
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