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onsemi Silicon Junction Switching Diode Single 2 A 1 kV DO-41 Through Hole MUR2100EG
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 2.7mm |
| Brand | onsemi |
| Height | 5.2mm |
| Length | 5.2mm |
| Model | MUR2100EG |
| Width | 2.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-41 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 35A |
| Maximum Forward Voltage Vf | 2.2V |
| Peak Reverse Recovery Time trr | 100ns |
| Maximum Forward Current If | 2A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 1kV |
Key Features
- The diode supports a maximum forward current of 2 amperes.
- It features a maximum peak reverse repetitive voltage of 1000 volts.
- The package type is DO-41 with a two-pin configuration suitable for through-hole mounting.
- The maximum forward voltage drop is 2.2 volts ensuring efficiency in switching applications.
- It offers a peak non-repetitive forward surge current of 35 amperes for transient protection.
- The device operates reliably within a temperature range of -65 to 175 degrees Celsius.
- The peak reverse recovery time is 100 nanoseconds ensuring fast switching performance.
Product Description
onsemi MUR2100EG is a Silicon Junction Switching Diode designed for use in electronic circuits that require reliable high voltage and current handling capabilities. It is a single diode device supporting a maximum forward current of 2 amperes and a peak reverse voltage rating of 1 kilovolt, housed in the industry-standard DO-41 through-hole package. Its 2-pin configuration allows easy mounting on printed circuit boards through hole placement.
This diode is widely applicable in various electronic and semiconductor applications including power rectification, switching power supplies, and high voltage power circuits. The 100 nanoseconds peak reverse recovery time ensures efficient operation in switching environments, reducing switching losses and improving performance. The maximum forward voltage drop is 2.2 volts, contributing to overall device efficiency.
Designed to operate over a wide temperature range from -65°C to 175°C, the MUR2100EG is suitable for demanding industrial and commercial settings. It handles peak non-repetitive forward surge currents up to 35 amperes, protecting circuits from transient surges and spikes.
Physical dimensions are compact with a length and height of 5.2 mm, width and diameter of 2.7 mm, making it suitable for dense PCB layouts. The diode features no specific automotive or other certifications but complies with applicable general semiconductor standards.
The diode supports a maximum forward current of 2 amperes. Maximum peak reverse repetitive voltage of 1 kilovolt. DO-41 package type with two pins for through-hole mount. Maximum forward voltage drop of 2.2 V. Peak non-repetitive forward surge current of 35 A.
Operating temperature range from -65°C to 175°C. Peak reverse recovery time of 100 ns. Compact physical dimensions for optimized PCB layout.
This switching diode is ideal for use in industrial, laboratory, and manufacturing electronics where robust electrical characteristics and durability are required. It is well-suited for power electronics, signal switching, and rectification in semiconductor circuits.
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Frequently Asked Questions
The MUR2100EG diode supports a maximum forward current of 2 amperes.
It features a maximum peak reverse repetitive voltage of 1 kilovolt (1000 volts).
This diode is housed in a DO-41 package type with a two-pin configuration suitable for through-hole mounting.
The maximum forward voltage drop is 2.2 volts, which contributes to its efficiency in switching applications.
It can handle a peak non-repetitive forward surge current of 35 amperes, providing transient protection.
The diode operates reliably within a temperature range of -65°C to 175°C.
The peak reverse recovery time is 100 nanoseconds, ensuring fast switching performance.
The diode has a length and height of 5.2 mm and a diameter of 2.7 mm, making it suitable for dense PCB layouts.
This model features a single diode configuration.
It is widely applicable in electronic and semiconductor applications including power rectification and switching power supplies.
While it does not have specific automotive or other certifications, it complies with applicable general semiconductor standards.
The diode has a pin count of 2, suitable for its through-hole mounting configuration.
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