World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

onsemi Single N-Channel JFET Transistor 25 V 12 to 30 mA 3-Pin SOT-23 MMBFJ309LT1G

Free Delivery in India | Lowest Global Shipping Charges

onsemi Single N-Channel JFET Transistor 25 V 12 to 30 mA 3-Pin SOT-23 MMBFJ309LT1G

Name: onsemi Single N-Channel JFET Transistor 25 V 12 to 30 mA 3-Pin SOT-23 MMBFJ309LT1G
Brand: onsemi
SKU: 130979
Price: 0.17 USD
Availability: InStock



Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.01mm
Length	3.04mm
Model	MMBFJ309LT1G
Width	1.4mm
Mount Type	Surface
Configuration	Single
Maximum Operating Temperature	150°C
Package Type	SOT-23
Sub Type	JFET
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Drain Source Voltage Vds	25V
Maximum Power Dissipation Pd	225mW
Maximum Gate Source Voltage Vgs	30V
Drain Source Current Ids	12 to 30 mA

Key Features

This discrete semiconductor device is a single N-channel junction field-effect transistor (JFET).
It has a maximum drain-source voltage of 25 V for low-voltage applications.
The device supports a drain-source current range of 12 to 30 mA.
Package type is compact surface mount with SOT-23 footprint for easy PCB integration.
Operating temperature range spans from -55°C to 150°C for reliable performance.
Maximum power dissipation is 225 mW, suitable for low power circuits.
The maximum gate-source voltage is rated at 30 V.

Product Description

onsemi MMBFJ309LT1G is a single N-Channel JFET transistor designed for low voltage and low power applications. This junction field-effect transistor (JFET) comprises a single N-channel configuration, providing efficient switching and amplification in various electronic circuits.

The transistor operates with a maximum drain-source voltage (Vds) of 25 V and supports a drain-source current (Ids) range of 12 to 30 mA, making it suitable for sensitive signal processing and small load control tasks. Its surface-mount SOT-23 package ensures compact installation and high-density PCB designs, minimizing space usage on circuit boards.

The device offers a maximum power dissipation (Pd) of 225 mW, aligning with low power dissipation needs typical in battery-operated and ambient temperature controlled environments. It operates safely within a temperature range from -55°C up to 150°C, assuring stability under various environmental conditions.

With a maximum gate-source voltage (Vgs) rating of 30 V, the MMBFJ309LT1G transistor provides reliable gate control and avoids damage from voltage spikes. Its physical dimensions of 3.04 mm length, 1.4 mm width, and 1.01 mm height support compact and precise layouts in electronic applications.

This N-Channel JFET is ideal for use in industrial, laboratory, and consumer electronics circuits where low noise and high input impedance are required. It supports switching and amplification functions in analog signal processing, impedance buffering, and voltage-controlled resistor applications.

The SOT-23 package facilitates automated assembly and efficient thermal dissipation. The transistor complies with no specific automotive standards, but its broad operating temperature makes it versatile for varied environments.

Ideal applications include power management circuits, waveform shaping, and low-level analog signal amplification.

Choose the onsemi MMBFJ309LT1G for compact, efficient, and durable N-channel JFET transistor solutions in your electronic design and manufacturing projects. Browse the Electronics Components category on EnvMart for more advanced semiconductor devices and discrete transistors.

Explore more products in our Discrete Semiconductor category.