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DiodesZetex PNP Bipolar Transistor BC807-40-7-F, 500 mA, 45 V, 3-Pin SOT-23 BC807-40-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model BC807-40-7-F
Width 2.5mm
Mount Type Surface
Series BC807
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 170
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q200, AEC-Q101, AEC-Q100
Maximum Power Dissipation Pd 310mW
Maximum DC Collector Current Idc -500mA
Transistor Configuration Single
BC80740LT1Brand ON Semiconductor
Infineon BC80740 PNP Bipolar Transistor, 500 mA, 45 V, 3-Pin SOT-23Brand Infineon

Key Features

  • This transistor features a surface mount type suitable for PCB assembly.
  • Supports a maximum power dissipation of 310 mW for reliable operation.
  • Has a minimum DC current gain (hFE) of 170 ensuring consistent amplification.
  • Designed for operation within a temperature range of -55°C to 150°C.
  • Complies with automotive standards AEC-Q200, AEC-Q101, and AEC-Q100.
  • Compact dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height optimize board space.
  • Suitable for general purpose amplification in electronic and power circuits.
  • Manufactured in China maintaining consistent quality control.

Product Description

DiodesZetex BC807-40-7-F PNP Bipolar Transistor is a general purpose transistor designed for use in various electronic circuits requiring medium power amplification. It supports a maximum DC collector current of 500 mA and collector emitter voltage of 45 V, making it ideal for switching and amplification tasks within automotive, industrial, and consumer electronics applications.

This transistor is housed in a 3-Pin SOT-23 surface mount package, allowing for compact PCB layouts and efficient thermal performance. It has a maximum power dissipation of 310 mW, ensuring stable operation under load conditions. The minimum DC current gain of 170 ensures consistent signal amplification.

Its operating temperature range from -55°C to 150°C enables reliable function even in harsh environments. The product complies with automotive quality standards AEC-Q200, AEC-Q101, and AEC-Q100, underlining suitability for automotive electronics and other demanding usage.

Dimensions are optimized for board space with a length of 3 mm, width of 2.5 mm, and height of 1.1 mm, facilitating easy integration into densely packed designs. This transistor features surface mount packaging with 3 pins for easy installation.

Supports maximum collector current of 500 mA with a collector emitter voltage of 45 V. Has a maximum power dissipation rating of 310 mW for stable performance. Minimum DC current gain of 170 for consistent circuit amplification.

Operates reliably from -55°C to 150°C for various industrial environments. Meets automotive standard certifications AEC-Q200, AEC-Q101, and AEC-Q100. Compact size with 3 mm length, 2.5 mm width, and 1.1 mm height.

This transistor is ideal for use in electronic components manufacturing, automotive electronics, power management circuits, and general industrial applications requiring reliable PNP bipolar transistors.

Explore more semiconductor components and Bipolar Transistors on EnvMart for a comprehensive selection of industrial-grade electronic parts designed to meet professional requirements.

DiodesZetex PNP Bipolar Transistor BC807-40-7-F, 500 mA, 45 V, 3-Pin SOT-23 BC807-40-7-F
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Frequently Asked Questions

The maximum DC collector current for this transistor is 500 mA.

It operates reliably within a temperature range of -55°C to 150°C.

The maximum power dissipation for this transistor is 310 mW.

This model has dimensions of 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

It complies with automotive standards AEC-Q200, AEC-Q101, and AEC-Q100.

The minimum DC current gain (hFE) is 170, ensuring consistent amplification.

It is housed in a 3-Pin SOT-23 surface mount package.

The maximum collector-emitter voltage (Vceo) is 45 V.

This is a PNP bipolar transistor designed for general purpose amplification.

The maximum emitter-base voltage (VEBO) is -5 V.

The maximum collector-base voltage (VCBO) is -50 V.

It is suitable for electronic components manufacturing, automotive electronics, and general industrial applications requiring reliable PNP bipolar transistors.

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