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DiodesZetex 2 Darlington Transistor NPN 500 mA 80 V 3-Pin SOT-23 MMBTA28-7-F

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DiodesZetex 2 Darlington Transistor NPN 500 mA 80 V 3-Pin SOT-23 MMBTA28-7-F

Name: DiodesZetex 2 Darlington Transistor NPN 500 mA 80 V 3-Pin SOT-23 MMBTA28-7-F
Brand: DiodesZetex
SKU: 127904
Price: 0.08 USD
Availability: InStock

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Category Darlington Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin	China
Brand	DiodesZetex
Height	1mm
Length	3mm
Model	MMBTA28-7-F
Mount Type	Surface
Series	MMBTA28
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Continuous Collector Current Ic	500mA
Maximum Collector Emitter Voltage Vceo	80V
Number of Elements per Chip	2
Minimum DC Current Gain hFE	10000
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	12V
Maximum Collector Base Voltage VCBO	80V
Maximum Collector Cut-off Current	0.0005mA
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	300mW
DiodesZetex MMBTA28-7-F 2 Darlington Transistor NPN, 500 mA 80 V HFE	10000, 3-Pin SOT-23

Key Features

High current gain (hFE) up to 10000 ensures strong amplification.
Maximum power dissipation rating of 300 mW for reliable performance.
Operates under a wide temperature range from -55°C to 150°C.
Features NPN transistor polarity with low saturation voltage of 80 V.
Equipped with automotive standard AEC-Q101 for quality assurance.
Designed for industrial and electronic semiconductor applications.
Includes 2 transistor elements integrated into a single chip.
Robust construction suitable for discrete semiconductor use in various devices.

Product Description

DiodesZetex MMBTA28-7-F is a 2-element Darlington NPN transistor designed for precise and reliable amplification in electronic circuits. This transistor supports a maximum continuous collector current of 500 mA and a maximum collector emitter voltage of 80 V, ensuring robust operation within demanding electrical parameters.

Housed in a compact 3-pin SOT-23 surface mount package, the device measures 3 mm in length and 1 mm in height, making it suitable for space-constrained electronic assemblies. The transistor features a minimum DC current gain (hFE) of 10000, allowing high amplification efficiency for low input signals.

This Darlington Transistor supports operation across a wide temperature range from -55°C to 150°C, which enables its use in various industrial, automotive, and semiconductor applications. It complies with the automotive industry standard AEC-Q101, confirming its high reliability and quality for automotive electronics.

The transistor polarity is NPN with a maximum emitter base voltage of 12 V and maximum collector base voltage of 80 V, coupled with a maximum power dissipation of 300 mW, ensuring optimal switching and amplification characteristics.

The device is designed specifically for use in discrete semiconductor components, power amplification stages, and other electronic control circuits in industries such as manufacturing, automotive electronics, industrial automation, and telecommunications.

High current gain (hFE) up to 10000 ensures strong amplification. Maximum power dissipation rating of 300 mW for reliable performance. Wide operating temperature range from -55°C to 150°C. Compact 3-pin SOT-23 surface mount package for space savings.

Complies with AEC-Q101 automotive standard for quality and reliability. Suitable for high-frequency switching applications. Low cutoff current of 0.0005 mA enables precise control. Robust NPN Darlington configuration for enhanced gain.

Designed for industrial, automotive, and semiconductor use cases. Consider exploring more semiconductor and transistor products at EnvMart for high-quality and reliable electronic components.