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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 800 V, 2.5 A, TO-220 Package STP3NK80Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP3NK80Z |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.5A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 4.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 70W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- High voltage 800 V N-Channel MOSFET designed for power switching.
- Maximum continuous drain current of 2.5 A for reliable performance.
- 3-pin TO-220 through-hole package ensures ease of mounting and heat dissipation.
- Low typical gate charge of 19 nC for efficient switching.
- Maximum power dissipation rating of 70 W to handle significant power loads.
- Wide operating temperature range from -55°C to 150°C, enhancing durability.
- Maximum drain-source resistance (Rds) of 4.5 Ω, contributing to minimal conduction losses.
- Enhancement mode channel ensuring controlled device operation.
Product Description
STMicroelectronics STP3NK80Z MDmesh SuperMESH N-Channel MOSFET is engineered for robust power switching applications in industrial, electronic, and power management systems. Featuring an 800 V maximum drain-source voltage and a continuous drain current rating of 2.5 A, this device supports efficient high-voltage operations with low conduction and switching losses.
Packaged in a 3-pin TO-220 through-hole format, the MOSFET offers excellent thermal performance and easy integration into electronic circuits. Its low typical gate charge of 19 nC enables rapid switching capabilities, enhancing overall system efficiency. The MOSFET also withstands a wide temperature range from -55°C to 150°C, making it suitable for demanding operating environments.
The device's maximum power dissipation of 70 W supports high power applications, while the maximum drain-source resistance of 4.5 Ω helps reduce energy loss during switching operations. With a gate-source voltage tolerance of ±30 V, it ensures stable and reliable electrical characteristics under varying conditions.
This STMicroelectronics MOSFET is ideal for use in power supply circuits, motor controls, automotive electronics, and general industrial power electronics requiring reliable high-voltage switching components.
High voltage N-Channel MOSFET designed for power switching. Continuous drain current rating of 2.5 A for steady performance. Low gate charge enables fast switching and efficiency. Robust TO-220 package supports thermal management.
Wide operating temperature range for versatile applications. Low drain-source resistance minimizes conduction losses. Enhancement mode channel for precise control. Wide gate voltage tolerance ensures device protection. Compact dimensions for easy PCB mounting.
Supports industrial, automotive, and power management uses.
This product belongs to the MOSFET category in semiconductor components, suitable for electronics, industrial equipment, and power management systems. Discover more STMicroelectronics MOSFETs and related parts at EnvMart for your electronic component requirements.
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Frequently Asked Questions
The maximum drain-source voltage for the STMicroelectronics STP3NK80Z is 800 V.
This model has a continuous drain current rating of 2.5 A.
The STP3NK80Z is packaged in a TO-220 format, which is a through-hole type.
The typical gate charge for this MOSFET is 19 nC.
The maximum power dissipation rating for this model is 70 W.
It operates within a temperature range of -55°C to 150°C.
The maximum drain-source resistance (Rds) is 4.5 Ω.
This model features an enhancement mode N-channel.
The maximum gate-source voltage tolerance is ±30 V.
The dimensions of the STP3NK80Z are 10.4 mm in length, 4.6 mm in width, and 9.15 mm in height.
This MOSFET is suitable for power supply circuits, motor controls, automotive electronics, and general industrial power electronics.
The STP3NK80Z belongs to the MDmesh and SuperMESH series.
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