onsemi UniFET N-Channel MOSFET, 18 A, 500 V Enhancement Mode, 3-Pin TO-220 Package FDPF18N50

onsemi FDPF18N50 UniFET N-Channel MOSFET is a high-voltage, enhancement-mode power transistor designed for robust switching applications requiring up to 18 A continuous drain current and 500 V drain-source voltage. It is housed in a TO-220 through-hole package with 3 pins, suitable for power converter circuits.

This MOSFET features exceptional electrical performance due to its UniFET technology, which combines low on-state resistance of 265 mΩ and superior avalanche energy tolerance. The device supports a maximum power dissipation of 38.5 W, enabling it to operate efficiently in demanding industrial environments.

Its operating temperature range spans from -55°C to 150°C, making it suitable for harsh environmental conditions, while the gate voltage rating of -30 V to +30 V facilitates stable gate drive and switching capabilities. The typical gate charge of 45 nC enhances switching speed, making it ideal for power factor correction, flat panel displays, ATX power supplies, and electronic lamp ballasts.

The physical dimensions of the device are 10.16 mm length, 9.19 mm height, and 4.7 mm width, fitting standard power electronics assemblies. The through-hole mount type allows straightforward integration and reliable mechanical stability.

onsemi's UniFET MOSFET family is recognized for delivering the smallest on-state resistance among planar MOSFETs and excellent switching characteristics. This part does not hold automotive standard approvals.

Operates in enhancement mode with N-channel type configuration. Features a low maximum drain-source resistance of 265 milliohms. Supports maximum power dissipation of 38.5 watts for reliable thermal management. Wide operating temperature range from minus 55 degrees Celsius to 150 degrees Celsius.

Designed for through-hole mounting with 3 pins for efficient circuit integration. Maximum gate-source voltage ranges from minus 30 volts to plus 30 volts providing stable switching. Typical gate charge is 45 nanocoulombs at rated voltage for superior switching performance.

Compact package dimensions of 10.16 mm length, 9.19 mm height, and 4.7 mm width. UniFET technology ensures small on-state resistance and high avalanche energy strength.

This MOSFET is ideal for industrial, electronic, power control, and semiconductor applications such as power factor correction circuits, ATX power supplies, electronic lamp ballasts, and flat panel display power sections. It enables efficient switching in power management systems.

Explore more semiconductor solutions and MOSFETs like the FDPF18N50 in the Electronics & Electricals category at EnvMart for professional industrial use.