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onsemi UniFET Type P-Channel MOSFET 460 mA 25 V Enhancement Mode 3-Pin SOT-23 FDV304P

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onsemi UniFET Type P-Channel MOSFET 460 mA 25 V Enhancement Mode 3-Pin SOT-23 FDV304P

Name: onsemi UniFET Type P-Channel MOSFET 460 mA 25 V Enhancement Mode 3-Pin SOT-23 FDV304P
Brand: onsemi
SKU: 163116
Price: 0.32 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	930μm
Length	2.92mm
Model	FDV304P
Width	1.3mm
Mount Type	Surface
Series	UniFET
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	460mA
Maximum Drain Source Voltage Vds	25V
Maximum Drain Source Resistance Rds	1.1Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	350mW
Typical Gate Charge Qg @ Vgs	1.1nC
Maximum Gate Source Voltage Vgs	8V
Forward Voltage Vf	-1.2V

Key Features

This enhancement mode P-Channel MOSFET is designed with high-density DMOS technology for superior switching performance.
It features a low maximum drain-source resistance of 1.1 Ω ensuring efficient conduction.
The device supports a maximum power dissipation of 350 mW and can operate between -55°C and 150°C.
The typical gate charge at Vgs is 1.1 nC which enables fast switching speeds.
Compact surface mount SOT-23 package provides ease of integration in small form factor circuits.
Applications include load switching, DC/DC converters, battery protection, and DC motor control.
It is a rugged and reliable small signal switch with voltage-controlled operation optimized for power management control circuits.

Product Description

onsemi FDV304P UniFET Type P-Channel MOSFET is an enhancement mode transistor fabricated using ON Semiconductor’s high cell density DMOS technology, aimed at minimizing on-state resistance for efficient and reliable fast switching in electronic circuits. It features a current carrying capacity of up to 460 mA and withstands a maximum drain-source voltage of 25 V.

The device comes in a compact surface mount SOT-23 package with three pins, allowing easy footprint integration in surface mount assemblies. Its maximum power dissipation rating of 350 mW ensures robust operation in control and load switching applications. The low maximum drain-source resistance of 1.1 Ω contributes to reduced conduction losses.

Operating temperature range from -55°C to 150°C makes it suitable for demanding industrial, automotive, and consumer electronics environments. With a typical gate charge of 1.1 nC at gate-source voltage, it supports quick switching performance, critical for DC/DC converters and power management circuits.

This P-Channel MOSFET is widely used in battery protection circuits, power management controls, DC motor drivers, and load switching applications within industrial equipment, commercial electronics, and automotive systems.

This device provides voltage-controlled P-Channel switching designed with proprietary high-density DMOS technology. It ensures high saturation current and superior switching characteristics with rugged and reliable performance.

Packaging in SOT-23 ensures space-saving design compatibility for surface mount printed circuit boards. Typical use cases include load switching, battery protection, DC/DC converters, and power management control. Thermal operation spans from -55°C minimum to 150°C maximum, supporting harsh operational conditions.

Compact physical dimensions with a length of 2.92 mm, width of 1.3 mm, and height of 930 µm facilitate integration in miniaturized electronic assemblies.

This product is ideal for industrial, automotive, and consumer electronics requiring reliable and efficient P-Channel MOSFET operation. Explore more on semiconductor and MOSFET products at EnvMart.