$1.82
$1.77
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
onsemi QFET Type P-Channel MOSFET, 27 A, 60 V Enhancement Mode, 3-Pin Surface Mount TO-263 FQB27P06TM
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | FQB27P06TM |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | QFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 27A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 70mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.75W |
| Typical Gate Charge Qg @ Vgs | 33nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -4V |
Key Features
- This MOSFET utilizes DMOS technology for rugged and reliable fast switching performance.
- It is designed with a high-density cell layout to minimize on-state resistance for superior efficiency.
- The device supports a maximum power dissipation of 3.75 W and a maximum operating temperature up to 175°C.
- Typical gate charge is 33 nC at a gate-source voltage of 3 V, enabling efficient gate drive control.
- The MOSFET is suitable for load switching, power management control, DC/DC converters, battery protection, and DC motor control applications.
Product Description
onsemi FQB27P06TM is a QFET Type P-Channel MOSFET designed for applications requiring robust and efficient power switching. It operates as an enhancement mode transistor with a continuous drain current of 27 A and a maximum drain-source voltage of 60 V. The compact 3-pin TO-263 surface mount package measures 10.67 mm length, 9.65 mm width, and 4.83 mm height.
Manufactured using ON Semiconductor's proprietary high cell density DMOS technology, the device offers low on-state resistance (70 mΩ max) resulting in lower conduction losses and high saturation current capability for demanding electronic circuits.
The transistor features a wide operating temperature range from -55°C minimum up to 175°C maximum, providing reliability across various environmental conditions. It has a maximum power dissipation rating of 3.75 W and supports a gate-source voltage range of -25 to +25 V.
With a typical gate charge of 33 nC at Vgs = 3V, the MOSFET ensures fast switching performance suitable for efficient power conversion. Forward voltage is specified at -4 V, and the device has three pins for surface mounting.
This MOSFET is ideal for industrial, laboratory, commercial, and automotive power control systems including load switching, DC/DC conversion, battery protection circuits, power management, and DC motor controls.
This MOSFET utilizes DMOS technology for rugged and reliable fast switching performance. It is designed with a high-density cell layout to minimize on-state resistance for superior efficiency. The device supports a maximum power dissipation of 3.75 W and a maximum operating temperature up to 175°C.
Typical gate charge is 33 nC at a gate-source voltage of 3 V, enabling efficient gate drive control. The MOSFET is suitable for load switching, power management control, DC/DC converters, battery protection, and DC motor control applications.
Explore more semiconductor devices and power transistor solutions on EnvMart for your electronic design and industrial automation needs.
Explore more products in our Discrete Semiconductor category.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 27 A.
It can handle a maximum drain-source voltage of 60 V.
This MOSFET comes in a TO-263 surface mount package.
The typical gate charge at a gate-source voltage of 3 V is 33 nC.
The maximum power dissipation rating for this MOSFET is 3.75 W.
The operating temperature range is from -55°C to 175°C.
The dimensions of the TO-263 package are 4.83 mm in height, 10.67 mm in length, and 9.65 mm in width.
The maximum gate-source voltage supported is -25 to +25 V.
This device is a P-Channel MOSFET.
It is suitable for load switching, power management control, DC/DC converters, battery protection, and DC motor control applications.
The maximum drain-source resistance is 70 mΩ.
This MOSFET utilizes DMOS technology for fast switching performance and low on-state resistance.
Related Products
$0.67
$0.65
-3%
New
Other Products from this brand
$6.86
$6.66
-3%
New
$0.97
$0.94
-3%
New
$0.06
$0.06
-3%
New
Recently Viewed Products
$1.82
$1.77
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent