onsemi P-Channel Enhancement Mode MOSFET 900 mA 30 V SOT-23 NDS352AP

The onsemi NDS352AP is a P-Channel Enhancement Mode MOSFET designed with ON Semiconductor's proprietary high cell density DMOS technology, delivering low on-state resistance and high ruggedness for fast switching applications.

This transistor supports a maximum continuous drain current of 900 mA and a maximum drain-source voltage of 30 V, making it suitable for efficient power control in various electronic circuits.

Encapsulated in a compact 3-pin SOT-23 surface mount package, the device measures 2.92 mm in length, 1.4 mm in width, and 940 μm in height, allowing for high-density PCB layouts and automated assembly processes.

Operating over a broad temperature range from -55°C to 150°C, the NDS352AP ensures reliable performance under demanding environmental conditions, including industrial and automotive applications.

Key electrical features include a maximum power dissipation of 500 mW, typical gate charge of 2 nC at Vgs, and a maximum gate-source voltage rating of -20 V to +20 V. The device is optimized for load switching, DC/DC conversion, battery protection circuits, and power management control systems.

Voltage controlled P-Channel silicon MOSFET optimized for fast switching. High-density cell design minimizing on-state resistance (Rds(on) = 500 mΩ). Compact footprint aids in space-saving circuit designs. Enhanced ruggedness with a maximum operating temperature of 150°C.

Suitable for embedded applications like DC motor control and power management. Surface mount technology compatible, easing manufacturing processes. Ideal for use in industrial electronics, automotive power systems, consumer devices, and telecommunications equipment where efficient power switching is critical.

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