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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 8.5mm |
| Length | 6.73mm |
| Model | MJD44H11G |
| Width | 2.38mm |
| Mount Type | Surface |
| Series | MJD44H11 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 80V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 1.75W |
| Maximum DC Collector Current Idc | 8A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 85MHz |
onsemi MJD44H11G is a high-performance NPN power transistor designed for electronic circuit switching and amplification applications. It offers a maximum collector current of 8 amperes and a collector emitter voltage of 80 volts, ensuring robust operation within many power electronic devices.
Its compact TO-252 surface mount package with 3 pins optimizes space on the printed circuit board and provides reliable mechanical assembly. The transistor supports a maximum power dissipation of 1.75 watts, making it suitable for medium power dissipation needs in industrial electronics.
The device features a minimum DC current gain (hFE) of 40, enabling effective signal amplification in various electronic circuits. With a maximum transition frequency of 85 MHz, it is capable of handling relatively high-frequency switching applications.
It operates efficiently across a wide temperature range from -55°C to 150°C, providing enhanced reliability in demanding environmental conditions. The MJD44H11G transistor is automotive standard qualified under AEC-Q101, indicating dependable performance in automotive and industrial applications.
Physical dimensions are compact with an 8.5 mm height, 6.73 mm length, and 2.38 mm width, facilitating space-constrained designs. The transistor’s single NPN configuration supports a wide variety of circuit applications including power regulation, amplification, and switching controls in electronics, automotive systems, and industrial machinery.
Maximum DC collector current rating of 8 amperes. Collector emitter voltage rated up to 80 volts. Surface mount 3-pin TO-252 package. Power dissipation capacity of 1.75 watts. NPN transistor with single configuration. Minimum DC current gain (hFE) of 40.
Maximum transition frequency of 85 MHz. Wide operating temperature range from -55°C to 150°C. Qualified to automotive standard AEC-Q101. Compact physical dimensions suitable for PCB mounting.
This transistor is ideal for industrial, automotive, communication, and electronic component applications where reliable power transistor performance is required. Explore more onsemi components and semiconductor products on EnvMart for a full spectrum of electronic solutions.
Explore more products in our Bipolar Transistors category.
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