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onsemi NPN Power Transistor 8A 80V 1.75W TO-252 Surface Mount Single Configuration 3-Pin MJD44H11G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 8.5mm
Length 6.73mm
Model MJD44H11G
Width 2.38mm
Mount Type Surface
Series MJD44H11
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.75W
Maximum DC Collector Current Idc 8A
Transistor Configuration Single
Maximum Transition Frequency ft 85MHz

Key Features

  • Maximum DC collector current rating of 8 amperes.
  • Collector emitter voltage rated up to 80 volts.
  • Surface mount device with a 3-pin TO-252 package for compact mounting.
  • Maximum power dissipation of 1.75 watts suitable for moderate power applications.
  • NPN transistor polarity with single transistor configuration.
  • Minimum DC current gain (hFE) of 40 ensuring sufficient amplification.
  • Maximum transition frequency of 85 MHz for high frequency switching.
  • Operating temperature range from -55°C up to 150°C for harsh environments.

Product Description

onsemi MJD44H11G is a high-performance NPN power transistor designed for electronic circuit switching and amplification applications. It offers a maximum collector current of 8 amperes and a collector emitter voltage of 80 volts, ensuring robust operation within many power electronic devices.

Its compact TO-252 surface mount package with 3 pins optimizes space on the printed circuit board and provides reliable mechanical assembly. The transistor supports a maximum power dissipation of 1.75 watts, making it suitable for medium power dissipation needs in industrial electronics.

The device features a minimum DC current gain (hFE) of 40, enabling effective signal amplification in various electronic circuits. With a maximum transition frequency of 85 MHz, it is capable of handling relatively high-frequency switching applications.

It operates efficiently across a wide temperature range from -55°C to 150°C, providing enhanced reliability in demanding environmental conditions. The MJD44H11G transistor is automotive standard qualified under AEC-Q101, indicating dependable performance in automotive and industrial applications.

Physical dimensions are compact with an 8.5 mm height, 6.73 mm length, and 2.38 mm width, facilitating space-constrained designs. The transistor’s single NPN configuration supports a wide variety of circuit applications including power regulation, amplification, and switching controls in electronics, automotive systems, and industrial machinery.

Maximum DC collector current rating of 8 amperes. Collector emitter voltage rated up to 80 volts. Surface mount 3-pin TO-252 package. Power dissipation capacity of 1.75 watts. NPN transistor with single configuration. Minimum DC current gain (hFE) of 40.

Maximum transition frequency of 85 MHz. Wide operating temperature range from -55°C to 150°C. Qualified to automotive standard AEC-Q101. Compact physical dimensions suitable for PCB mounting.

This transistor is ideal for industrial, automotive, communication, and electronic component applications where reliable power transistor performance is required. Explore more onsemi components and semiconductor products on EnvMart for a full spectrum of electronic solutions.

Explore more products in our Bipolar Transistors category.

onsemi NPN Power Transistor 8A 80V 1.75W TO-252 Surface Mount Single Configuration 3-Pin MJD44H11G
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Frequently Asked Questions

The maximum DC collector current rating for this model is 8 amperes.

It is rated for a collector-emitter voltage of up to 80 volts.

This transistor can dissipate a maximum power of 1.75 watts.

The maximum transition frequency is 85 MHz, suitable for high-frequency switching applications.

The dimensions are 8.5 mm in height, 6.73 mm in length, and 2.38 mm in width.

It operates efficiently within a temperature range from -55°C to 150°C.

The minimum DC current gain (hFE) is 40, providing sufficient amplification.

This model uses a TO-252 surface mount package with a 3-pin configuration.

Yes, it is qualified under the automotive standard AEC-Q101, making it suitable for automotive applications.

It features a single NPN transistor configuration.

The maximum emitter-base voltage (VEBO) is 5 volts.

This transistor is suitable for power regulation, amplification, and switching controls in electronics, automotive systems, and industrial machinery.

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