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onsemi PNP Power Transistor 8 A, 250 V, 50 W, TO-220, 3-Pin MJE15033G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 30.02mm
Length 10.53mm
Model MJE15033G
Width 4.83mm
Mount Type Through Hole
Series MJE15033
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -250V
Minimum DC Current Gain hFE 10
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 250V
Maximum Power Dissipation Pd 50W
Maximum DC Collector Current Idc -8A
Transistor Configuration Single
Maximum Transition Frequency ft 30MHz

Key Features

  • Supports maximum power dissipation of 50 watts for handling high power applications.
  • Designed for through-hole mount with 3-pin configuration ensuring ease of installation.
  • Operates over a wide temperature range from -65°C to 150°C for reliable performance.
  • Offers a minimum DC current gain (hFE) of 10 for efficient transistor operation.
  • Maximum transition frequency is 30 MHz suitable for moderate frequency applications.
  • PNP transistor polarity specifically suited for switching and amplification in PNP circuits.
  • Package dimensions approximately 30.02 mm height, 10.53 mm length, and 4.83 mm width.

Product Description

onsemi MJE15033G is a PNP bipolar power transistor designed for robust power control and amplification tasks in electronic circuits. It offers a maximum DC collector current of -8 A and a collector-emitter voltage of -250 V, enabling handling of significant power loads.

Housed in a TO-220 package with 3 pins, the transistor is suitable for through-hole mounting providing mechanical stability and ease of soldering on PCBs. The device supports a maximum power dissipation of 50 W, making it ideal for industrial, power supply, and motor control applications.

Its operating temperature range from -65°C minimum to 150°C maximum ensures performance stability in harsh environments. The PNP polarity transistor has a minimum current gain (hFE) of 10, making it effective in switching and amplification roles.

The MJE15033G has a maximum transition frequency of 30 MHz, adequate for moderate frequency signal amplification. It also supports high voltage conditions with a maximum collector-base voltage of 250 V and emitter-base voltage of 5 V.

Typical package dimensions are height 30.02 mm, length 10.53 mm, and width 4.83 mm. The component conforms to non-automotive standards and lacks specific approvals. Supports maximum power dissipation of 50 watts for handling high power applications.

Designed for through-hole mount with 3-pin configuration ensuring ease of installation. Operates over a wide temperature range from -65°C to 150°C for reliable performance. Offers a minimum DC current gain (hFE) of 10 for efficient transistor operation.

Maximum transition frequency is 30 MHz suitable for moderate frequency applications. PNP transistor polarity specifically suited for switching and amplification in PNP circuits. Package dimensions approximately 30.02 mm height, 10.53 mm length, and 4.83 mm width.

This transistor is widely used in industrial electronics, manufacturing equipment, power modules, HVAC control, motor drivers, and laboratory instrument designs. Explore the Electronics & Electricals category for more semiconductor components and power transistors with similar specifications at EnvMart.

Explore more products in our Bipolar Transistors category.

onsemi PNP Power Transistor 8 A, 250 V, 50 W, TO-220, 3-Pin MJE15033G
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Frequently Asked Questions

The MJE15033G supports a maximum power dissipation of 50 watts, making it suitable for high power applications.

This model operates over a wide temperature range from -65°C to 150°C, ensuring reliable performance in various environments.

The maximum collector-emitter voltage (Vceo) for this transistor is -250 V, allowing it to handle significant voltage levels.

The MJE15033G has a minimum DC current gain (hFE) of 10, which is effective for efficient transistor operation.

This transistor features a 3-pin configuration, designed for through-hole mounting to ensure ease of installation.

The maximum transition frequency for this model is 30 MHz, suitable for moderate frequency applications.

The package dimensions for the MJE15033G are approximately 30.02 mm in height, 10.53 mm in length, and 4.83 mm in width.

This model is designed for through-hole mounting, providing mechanical stability and ease of soldering on PCBs.

The maximum DC collector current (Idc) for the MJE15033G is -8 A, allowing it to handle significant current loads.

This transistor is widely used in industrial electronics, power supply, motor control, and HVAC control applications.

The maximum emitter-base voltage (VEBO) for this model is 5 V, which is crucial for its operation in PNP circuits.

The MJE15033G has a PNP transistor polarity, making it specifically suited for switching and amplification in PNP circuits.

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