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Vishay SIB Type N-Channel MOSFET, 6 A Continuous Drain Current, 6 V Drain Source Voltage, PowerPAK SC-75 SIB4316EDK-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIB4316EDK-T1-GE3 |
| Mount Type | Surface |
| Series | SIB |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK SC-75 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 6V |
| Maximum Drain Source Resistance Rds | 0.057Ω |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 3.5nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Typical ESD protection | 1500 V (HBM) |
Key Features
- The device features a surface mount type for easy PCB integration.
- Maximum drain source resistance of 0.057 ohms ensures efficient switching.
- Typical gate charge at Vgs is 3.5 nC for low gate drive power.
- Maximum power dissipation rated at 1 W supports robust performance.
- Operates reliably within temperature range from -55°C to 150°C.
- Maximum gate source voltage of 12 V protects against voltage spikes.
- Complies with RoHS standards for environmental safety.
- Includes typical ESD protection of 1500 V (HBM) for durable handling.
Product Description
Vishay SIB4316EDK-T1-GE3 is a high-performance N-Channel MOSFET designed for power management applications including load switching and DC/DC converters. It supports a maximum continuous drain current of 6 A and a drain source voltage limit of 6 V. Packaged in a thermally enhanced and compact PowerPAK SC-75 surface mount package, this device offers a small footprint suitable for space-constrained electronic circuits.
The MOSFET boasts a low drain source resistance (Rds) of 0.057 ohms, allowing for efficient conduction and power savings. Typical gate charge of 3.5 nC at gate source voltage (Vgs) optimizes switching speed and reduces gate drive losses. It can dissipate a maximum power of 1 watt, ensuring reliable operation under load.
This component is qualified under RoHS environmental standards and features built-in Electrostatic Discharge (ESD) protection rated at 1500 V Human Body Model (HBM), safeguarding device integrity during handling and assembly.
The device operates over a wide temperature range, from -55 degrees Celsius to 150 degrees Celsius, ensuring suitability for industrial, automotive (non-automotive standard), and consumer electronics. The maximum gate source voltage rating is 12 V, providing protection against voltage spikes and transient conditions.
The device is ideal for use in load switches, DC/DC converters, and power management modules. Surface mount PowerPAK SC-75 package provides excellent thermal management and allows for compact PCB layouts. Small footprint and low resistance make it well-suited for modern electronics requiring efficient switching solutions.
Robust ESD protection and RoHS compliance enhance reliability and environmental compatibility. Wide operating temperature range ensures versatility across diverse applications. Explore further related components in the MOSFET category on EnvMart for comprehensive electronic component solutions.
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Frequently Asked Questions
The maximum continuous drain current of this model is 6 A.
This MOSFET has a maximum drain source voltage of 6 V.
The typical gate charge at a gate source voltage (Vgs) is 3.5 nC.
The maximum power dissipation rated for this model is 1 W.
It is packaged in a PowerPAK SC-75 surface mount type, suitable for compact PCB layouts.
The maximum drain source resistance (Rds) is 0.057 ohms.
This device operates reliably within a temperature range from -55°C to 150°C.
The maximum gate source voltage (Vgs) is rated at 12 V.
Yes, it complies with RoHS standards for environmental safety.
It includes typical ESD protection rated at 1500 V (HBM).
This model is suitable for power management applications including load switching and DC/DC converters.
The country of origin for this device is India.
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