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| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 0.8mm |
| Length | 2.4mm |
| Model | SSM3J356R,LF(T |
| Width | 2.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 400mΩ |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 8.3nC |
| Maximum Gate Source Voltage Vgs | -20V |
| Forward Voltage Vf | 0.9V |
Toshiba SSM3J356R,LF(T is a high-quality P-Channel MOSFET designed for power management and switching applications. It offers a continuous drain current of 2 amps and a maximum drain-source voltage of 60 volts, housed in a compact 3-pin SOT-23 surface mount package suitable for integration in modern electronic assemblies.
Constructed with silicon material, this MOSFET provides reliable operation over a wide ambient temperature range from -55°C up to 150°C, ensuring durability in demanding environments. The device has a maximum power dissipation rating of 2 watts, supporting efficient heat management in circuit designs.
The component features a low maximum drain-source resistance of 400 milliohms, minimizing power loss and enhancing circuit performance. Its typical gate charge of 8.3 nanocoulombs at the standard gate voltage allows for fast switching speeds and reduced gate drive power requirements.
Operating under a maximum gate-source voltage of -20 volts, the MOSFET maintains stable switching behavior. The forward voltage of 0.9 volts contributes to high efficiency in power regulation applications. The small dimensions (2.4mm length, 2.9mm width, and 0.8mm height) facilitate compact PCB layouts and surface mount technology assembly.
Efficient P-Channel MOSFET for power management. Supports continuous drain current of 2A with 60V drain-source voltage. Compact 3-pin SOT-23 surface mount package design. Wide operating temperature range from -55°C to 150°C.
Maximum power dissipation rated at 2 watts. Low drain-source resistance of 400 milliohms for energy efficiency. Typical gate charge of 8.3 nanocoulombs for fast switching. Forward voltage of 0.9 volts to optimize power use.
Stable operation with -20V maximum gate-source voltage. Ideal for industrial, electronic components, and power semiconductor applications.
This Toshiba MOSFET is widely used in industrial power management circuits, consumer electronics, and semiconductor device applications where reliable switching and efficient energy handling are critical. Its surface mount footprint supports modern PCB manufacturing processes, making it an excellent choice for electronic component designers.
Explore more semiconductor and MOSFET products on EnvMart to find suitable components for your industrial and electronic projects.
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