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Toshiba P-Channel MOSFET 2A, 60V, 3-Pin SOT-23 Surface Mount SSM3J356R,LF(T

Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin India
Brand Toshiba
Height 0.8mm
Length 2.4mm
Model SSM3J356R,LF(T
Width 2.9mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 2A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 400mΩ
Maximum Power Dissipation Pd 2W
Typical Gate Charge Qg @ Vgs 8.3nC
Maximum Gate Source Voltage Vgs -20V
Forward Voltage Vf 0.9V

Key Features

  • Provides efficient power management switching in electronic circuits.
  • Operates reliably within temperature range -55°C to 150°C.
  • Features a maximum power dissipation of 2 watts.
  • Has a low maximum drain-source resistance of 400 milliohms.
  • Compact dimensions of 2.4mm length, 2.9mm width, and 0.8mm height.
  • Includes a typical gate charge of 8.3 nanocoulombs at standard gate voltage.
  • Supports a maximum gate-source voltage of -20 volts for stable switching.
  • Forward voltage rated at 0.9 volts to optimize circuit efficiency.

Product Description

Toshiba SSM3J356R,LF(T is a high-quality P-Channel MOSFET designed for power management and switching applications. It offers a continuous drain current of 2 amps and a maximum drain-source voltage of 60 volts, housed in a compact 3-pin SOT-23 surface mount package suitable for integration in modern electronic assemblies.

Constructed with silicon material, this MOSFET provides reliable operation over a wide ambient temperature range from -55°C up to 150°C, ensuring durability in demanding environments. The device has a maximum power dissipation rating of 2 watts, supporting efficient heat management in circuit designs.

The component features a low maximum drain-source resistance of 400 milliohms, minimizing power loss and enhancing circuit performance. Its typical gate charge of 8.3 nanocoulombs at the standard gate voltage allows for fast switching speeds and reduced gate drive power requirements.

Operating under a maximum gate-source voltage of -20 volts, the MOSFET maintains stable switching behavior. The forward voltage of 0.9 volts contributes to high efficiency in power regulation applications. The small dimensions (2.4mm length, 2.9mm width, and 0.8mm height) facilitate compact PCB layouts and surface mount technology assembly.

Efficient P-Channel MOSFET for power management. Supports continuous drain current of 2A with 60V drain-source voltage. Compact 3-pin SOT-23 surface mount package design. Wide operating temperature range from -55°C to 150°C.

Maximum power dissipation rated at 2 watts. Low drain-source resistance of 400 milliohms for energy efficiency. Typical gate charge of 8.3 nanocoulombs for fast switching. Forward voltage of 0.9 volts to optimize power use.

Stable operation with -20V maximum gate-source voltage. Ideal for industrial, electronic components, and power semiconductor applications.

This Toshiba MOSFET is widely used in industrial power management circuits, consumer electronics, and semiconductor device applications where reliable switching and efficient energy handling are critical. Its surface mount footprint supports modern PCB manufacturing processes, making it an excellent choice for electronic component designers.

Explore more semiconductor and MOSFET products on EnvMart to find suitable components for your industrial and electronic projects.

Toshiba P-Channel MOSFET 2A, 60V, 3-Pin SOT-23 Surface Mount SSM3J356R,LF(T
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Frequently Asked Questions

The maximum continuous drain current for this model is 2A.

It can handle a maximum drain-source voltage of 60V.

The dimensions are 2.4mm in length, 2.9mm in width, and 0.8mm in height.

This model comes in a SOT-23 package type.

The maximum power dissipation rating is 2 watts.

The typical gate charge is 8.3 nanocoulombs.

The maximum gate-source voltage supported is -20 volts.

The forward voltage rating is 0.9 volts.

It features a maximum drain-source resistance of 400 milliohms.

The operating temperature range is from -55°C to 150°C.

This MOSFET has a pin count of 3.

This model utilizes a P-channel type.

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