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Wolfspeed Silicon Carbide N-Channel MOSFET 36 A, 900 V Enhancement Mode TO-247 Package C3M0065090D

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Wolfspeed Silicon Carbide N-Channel MOSFET 36 A, 900 V Enhancement Mode TO-247 Package C3M0065090D

Name: Wolfspeed Silicon Carbide N-Channel MOSFET 36 A, 900 V Enhancement Mode TO-247 Package C3M0065090D
Brand: Wolfspeed
SKU: 110644
Price: 20.33 USD
Availability: InStock

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Category Power MOSFET Brand Wolfspeed Condition New

Specifications

Country of Origin	China
Brand	Wolfspeed
Height	5.21mm
Length	16.13mm
Model	C3M0065090D
Width	21.1mm
Mount Type	Through Hole
Series	C3M
Maximum Operating Temperature	150°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type N
Maximum Continuous Drain Current Id	36A
Maximum Drain Source Voltage Vds	900V
Maximum Drain Source Resistance Rds	78mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	125W
Typical Gate Charge Qg @ Vgs	30.4nC
Maximum Gate Source Voltage Vgs	18V
Forward Voltage Vf	4.4V

Key Features

Employs second-generation silicon carbide technology for improved switching efficiency.
Has a maximum continuous drain current of 36 amperes.
Supports a high drain-source voltage up to 900 volts.
Features a low maximum drain-source resistance of 78 milliohms.
Capable of fast switching with a typical gate charge of 30.4 nC at Vgs.
Supports a wide operating temperature range from -55°C to 150°C.
Designed for through-hole mounting in industrial power applications.
Package dimensions are 16.13 mm length, 21.1 mm width, and 5.21 mm height.

Product Description

Wolfspeed C3M0065090D is a high-performance silicon carbide N-channel MOSFET designed for industrial and power electronics applications requiring efficient power switching and high durability. It belongs to the C3M series, offering state-of-the-art power density and switching efficiency with reduced cooling needs.

This 36 amp device supports a maximum drain-source voltage of 900 V and features a low on-resistance of 78 mΩ, which minimizes conduction losses. The MOSFET is manufactured with second-generation SiC technology, offering enhancements like latch-up resistance and fast switching speeds with a gate charge of 30.4 nC at 30 V gate voltage.

The transistor is housed in a TO-247 package with through-hole mounting suitable for industrial installations. It maintains stable operation across a broad temperature range from -55°C to 150°C, ensuring reliability under harsh conditions. The device's forward voltage is 4.4 V with a maximum gate-source voltage rating of 18 V.

Typical applications include power conversion systems, electric vehicle inverters, industrial motor drives, renewable energy systems, and high frequency switching circuits. The device offers ease of paralleling for increased current capabilities in larger setups. The package dimensions (Length: 16.13 mm, Width: 21.1 mm, Height: 5.21 mm) facilitate easy integration into existing designs.

Second-generation silicon carbide enhancement-mode N-channel MOSFET technology. 36 A continuous drain current rating with 900 V drain-source voltage capability. Low on-state resistance and low gate charge reduce power losses and thermal load.

Wide operating temperature span from -55°C to 150°C for harsh environment endurance. 3-pin TO-247 through-hole package for robust mechanical and thermal performance. Suitable for industrial, automotive, renewable energy, and high-frequency switching applications.

Wolfspeed Power MOSFETs offer superior performance in industrial electronic components and semiconductor categories. Browse EnvMart for comprehensive Wolfspeed products and industrial power semiconductors to support your advanced engineering projects.