Infineon 650 V 16 A Schottky Barrier Diode Surface Mount HDSOP 10-Pin IDDD16G65C6XTMA1

Infineon IDDD16G65C6XTMA1 is a high-performance Schottky Barrier Diode featuring a surface mount 10-pin HDSOP package designed for demanding electronic applications. Rated for a peak reverse repetitive voltage of 650 V and maximum continuous forward current of 16 A, this diode enables efficient power rectification with a low forward voltage drop of 1.25 V. Designed to operate reliably over a temperature range of -55°C to 175°C, it suits harsh industrial, automotive, and commercial environments.

The diode's robust construction adheres to JEDEC standards (J-STD20 and JESD22), ensuring durability and consistent performance in power supply circuits, solar inverters, telecom equipment, and server power modules. With a peak non-repetitive forward surge current of 82 A and low peak reverse current of 123 μA, the component delivers high efficiency and reliability in switching and rectification roles.

The 10-pin HDSOP surface mount package measures 15.6 mm wide, 6.6 mm long, and 2.35 mm high, optimizing board space while providing thermal management benefits. This diode is part of Infineon's IDD series featuring double DPAK technology, which facilitates top-side cooling and thermal decoupling from the PCB, overcoming thermal limitations and enhancing power density.

Maximum continuous forward current of 16 amperes supports high power applications. Peak reverse repetitive voltage is rated at 650 volts for reliable blocking capability. Low maximum forward voltage of 1.25 volts ensures efficient conduction.

Built in a 10-pin HDSOP package with surface mount configuration for compact PCB designs. Wide operating temperature range from -55°C minimum to 175°C maximum for harsh environments. Peak non-repetitive forward surge current capability of 82 amperes.

Low peak reverse current of 123 microamperes for reduced leakage losses. Complies with JEDEC standards including J-STD20 and JESD22 for reliability. Dimensions of 15.6 mm width, 6.6 mm length, and 2.35 mm height for precise footprint.

Designed for power supply, solar, telecom, and server applications requiring high efficiency.

This diode is ideal for use in industrial, laboratory, electronic manufacturing, power conversion, telecommunications, and solar energy systems. Its enhanced thermal characteristics and low parasitic source inductance improve overall system efficiency and ease of integration.

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