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Infineon Bipolar Transistor NPN, 70 mA, 4 V, 45 GHz, 4-Pin SOT-343 BFP760H6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BFP760H6327XTSA1 |
| Mount Type | Surface |
| Series | BFP760 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-343 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | JEDEC47/20/22 |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 4V |
| Minimum DC Current Gain hFE | 160 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 1.2V |
| Maximum Collector Base Voltage VCBO | 13V |
| Maximum Power Dissipation Pd | 240mW |
| Maximum DC Collector Current Idc | 70mA |
| Maximum Transition Frequency ft | 45GHz |
Key Features
- The transistor features a 4-pin SOT-343 package suitable for surface mounting.
- It provides a high transition frequency of 45 GHz, ideal for RF applications.
- Maximum power dissipation is 240 mW, ensuring safe operation within limits.
- The device operates reliably over a temperature range from -55°C to 150°C.
- Minimum DC current gain (hFE) is 160, supporting efficient signal amplification.
- Maximum collector base voltage is rated at 13 V, and maximum emitter base voltage is 1.2 V.
- The transistor is designed to meet JEDEC47/20/22 standards, ensuring quality and reliability.
- It is suitable for low voltage applications including wireless and satellite communications.
Product Description
Infineon BFP760H6327XTSA1 is a robust low noise broadband pre-matched RF heterojunction bipolar transistor with NPN polarity, designed for precise low voltage applications requiring high frequency performance. This transistor operates at a maximum DC collector current of 70 mA and supports a collector emitter voltage of 4 V, packaged in a compact 4-pin SOT-343 surface-mount case.
The device achieves a maximum transition frequency of 45 GHz, enabling superior noise performance in RF systems including wireless communication, satellite systems, CATV, FM radio, and portable multimedia applications such as TV and navigation systems. The BFP760 series uniquely combines high-end RF performance with device robustness to provide reliable operation under demanding environmental conditions, with an operating temperature range of -55°C to 150°C.
This bipolar transistor supports a minimum DC current gain of 160, with collector base voltage and emitter base voltage limits at 13 V and 1.2 V respectively, while maintaining a maximum power dissipation capacity of 240 mW. It complies with JEDEC47/20/22 standards to ensure consistency and quality in semiconductor performance.
The transistor package type is SOT-343 for compact surface mount assembly. Optimized for applications in industrial, communication, and consumer electronics sectors. Its noise characteristics make it suitable for sensitive measurement and signal amplification roles.
Ideal component for designing RF front-end and amplification circuits in modern electronic devices. Provides dependable performance in harsh environmental conditions, expanding its usability across diverse industrial uses.
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Frequently Asked Questions
The maximum transition frequency of this model is 45 GHz, making it suitable for high-frequency RF applications.
It has a maximum power dissipation capacity of 240 mW, ensuring safe operation within specified limits.
This transistor operates reliably over a temperature range from -55°C to 150°C.
The minimum DC current gain (hFE) for this transistor is 160, supporting efficient signal amplification.
The maximum collector-emitter voltage is rated at 4 V, and the maximum emitter-base voltage is 1.2 V.
This model is packaged in a 4-pin SOT-343 surface-mount case, suitable for compact assembly.
It complies with JEDEC47/20/22 standards, ensuring quality and reliability in semiconductor performance.
The maximum DC collector current for this model is 70 mA.
Yes, it is designed for low voltage applications, including wireless and satellite communications.
This transistor has a pin count of 4, corresponding to its SOT-343 package design.
The transistor has an NPN polarity, which is typical for many RF applications.
The country of origin for this model is India.
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