Toshiba Type N-Channel Discrete IGBT 40 A 1200 V 3-Pin TO-3P Through Hole GT40QR21,F(O

Toshiba GT40QR21,F(O is a Type N-Channel discrete Insulated Gate Bipolar Transistor (IGBT) designed to combine the fast switching capabilities of MOSFETs with the high current handling and low saturation voltage of bipolar transistors. It features a maximum continuous collector current of 40 A and can withstand voltages up to 1200 V, making it ideal for power electronics applications requiring efficient and reliable switching.

This IGBT comes in a 3-pin TO-3P package with through-hole mounting, ensuring secure installation and excellent thermal performance. The device supports switching speeds up to 2.5 MHz and has a maximum power dissipation of 230 W, making it suitable for various industrial, automotive, and power control systems.

The maximum gate emitter voltage is ±25 V, which protects the device against gate voltage spikes, and the collector emitter saturation voltage is low at 1.9 V, minimizing conduction losses. It operates reliably over a broad temperature range from -55°C to 175°C, suitable for harsh environments.

Designed with RoHS compliance for environmental safety, this IGBT is manufactured in Japan to ensure strict quality controls. Typical applications include industrial motor drives, power inverters, uninterruptible power supplies (UPS), and other high-efficiency power switching systems.

Maximum continuous collector current of 40 A. Voltage rating up to 1200 V. High power dissipation rating of 230 W. 3-pin TO-3P package with through-hole mount. Fast switching with 2.5 MHz capability. Gate emitter voltage tolerance ±25 V.

Low saturation voltage of 1.9 V. Operating temperature from -55°C to 175°C. RoHS compliant. Manufactured in Japan. Explore more Toshiba semiconductor products and efficient IGBTs in the EnvMart catalog for your industrial and electronics design needs.

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