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Infineon HEXFET Type N-Channel MOSFET 17 A 55 V Enhancement 3-Pin TO-252 IRLR024NTRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | IRLR024NTRPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 110mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 1.3V |
Key Features
- This MOSFET operates with a maximum continuous drain current of 17 amperes.
- It offers a maximum drain-source voltage rating of 55 volts, suitable for medium power switching.
- The device is housed in a compact TO-252 package with dimensions 6.73 mm length, 6.22 mm width, and 2.39 mm height.
- Featuring low drain-source resistance of 110 milliohms, minimizing conduction losses.
- Designed for operation between -55°C to 175°C, enabling high-temperature reliability.
- Typical gate charge is 15 nanocoulombs at recommended gate voltage, ensuring efficient switching.
- Maximum gate-source voltage rating of 16 volts ensures device protection during gate driving.
- Power dissipation capability is 45 watts, facilitating robust thermal performance in demanding circuits.
Product Description
Infineon IRLR024NTRPBF is a HEXFET Type N-Channel Power MOSFET designed for power electronic applications requiring efficient switching and reliable performance under demanding conditions.
This device can handle a maximum continuous drain current of 17 A and withstands up to 55 V drain-source voltage, which makes it ideal for medium voltage power management circuits. Its compact TO-252 form factor facilitates space-saving PCB layouts and effective surface mounting.
Electrical performance is enhanced by a low drain-source on-resistance value of 110 mΩ, reducing heat generation and improving overall efficiency. It supports an operating temperature range from -55°C to 175°C, suitable for industrial and automotive environment tolerances.
The MOSFET’s gate characteristics include a typical gate charge of 15 nC at the specified gate-source voltage, enabling fast switching with minimal driver power requirements. With a max gate-source voltage of 16 V, the gate structure is protected against overvoltage, ensuring device reliability.
This enhancement mode transistor dissipates up to 45 W, so thermal management is critical in application design. It comes with 3 pins configured for surface mount installation, improving assembly efficiency in industrial and commercial electronics manufacturing.
Maximum continuous drain current: 17 A. Maximum drain-source voltage: 55 V. TO-252 package for compact surface mounting. Low drain-source resistance: 110 mΩ. Wide operating temperature range: -55°C to 175°C. Typical gate charge: 15 nC at Vgs.
Maximum gate-source voltage: 16 V. Power dissipation up to 45 W. 3-pin configuration suitable for automated assembly.
This Infineon HEXFET MOSFET is ideal for use in industrial power supplies, motor control electronics, DC-DC converters, automotive electronics, and various consumer power applications where efficient and robust switching devices are mandatory.
Browse EnvMart’s extensive selection of Power MOSFETs to find complementary components and related semiconductor devices.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17 A.
It has a maximum drain-source voltage rating of 55 V.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
The low drain-source resistance value is 110 mΩ, which minimizes conduction losses.
This model operates within a temperature range of -55°C to 175°C.
The typical gate charge is 15 nC at the specified gate-source voltage.
The maximum gate-source voltage rating is 16 V, which helps protect the device during gate driving.
It has a power dissipation capability of up to 45 W, facilitating robust thermal performance.
This model supports surface mounting with a 3-pin configuration.
It is suitable for applications such as industrial power supplies, motor control electronics, and DC-DC converters.
This MOSFET belongs to the HEXFET series, designed for efficient power electronic applications.
The channel type of this model is N-Channel, designed for enhancement mode operation.
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