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Vishay Type N-Channel Power MOSFET, 20 A, 500 V Enhancement Mode, 3-Pin TO-247AC SIHG20N50C-E3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | SIHG20N50C-E3 |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | SiHG20N50C |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247AC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 0.27Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 76nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Enhancement mode channel suitable for high voltage switching applications.
- Maximum drain-source resistance of 0.27 ohms ensuring efficient conduction.
- Operating temperature range from -55°C to 150°C for robust performance.
- Maximum power dissipation of 250 W to handle extensive load conditions.
- Maximum gate-source voltage rated at 30 V for stable gate control.
- Compact dimensions with length 15.87 mm, width 5.31 mm, and height 20.82 mm.
- Forward voltage of 1.5 V and typical gate charge of 76 nC at Vgs for quick switching.
- Compliant with RoHS and IEC 61249-2-21 standards ensuring regulatory compliance.
Product Description
Vishay SIHG20N50C-E3 is a Type N-Channel Power MOSFET designed for applications requiring high current handling and high voltage tolerance. With a maximum continuous drain current of 20 A and a maximum drain-source voltage of 500 V, this enhancement mode transistor is well suited for power switching, industrial electronics, and power management systems.
This MOSFET comes in a 3-pin TO-247AC package designed for through-hole mounting which ensures durable mechanical stability on printed circuit boards. Its maximum drain-source resistance of 0.27 ohms minimizes conduction losses, contributing to efficient operation.
The device supports a wide operating temperature range from -55°C to 150°C, making it reliable under harsh thermal conditions. It dissipates up to 250 W of power, suitable for demanding high-power environments.
Featuring a maximum gate-source voltage of 30 V, the transistor allows for precise gate voltage control and switching speed optimized by a typical gate charge of 76 nC at Vgs. Its compact size (15.87 mm length, 5.31 mm width, and 20.82 mm height) makes it an ideal choice where space is limited.
Vishay SIHG20N50C-E3 adheres to RoHS and IEC 61249-2-21 standards, making it an environmentally compliant choice for industrial, commercial, and laboratory use in sectors such as power electronics, automotive electronics (non-automotive grade), HVAC, manufacturing, and electronic component assemblies.
Enhancement mode N-Channel MOSFET enables efficient high speed switching. Handles up to 20 A drain current with a voltage rating of 500 V. Through-hole TO-247AC package designed for sturdy PCB mounting. Wide operating temperature range from -55°C to 150°C.
Low drain-source resistance of 0.27 Ω reduces conduction losses. Power dissipation capacity of 250 W suitable for high power applications. Gate-source voltage rating of ±30 V for stable gate control. Compliant with international RoHS and IEC standards.
Compact dimensions for space-sensitive electronic designs. Explore EnvMart’s extensive catalog for more semiconductor components, Power MOSFETs, and electronic components to enhance your industrial and electronic system designs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 20 A.
This MOSFET has a maximum drain-source voltage rating of 500 V.
It can dissipate up to 250 W of power, making it suitable for high power applications.
The maximum gate-source voltage is rated at ±30 V.
The operating temperature range is from -55°C to 150°C.
The dimensions are 15.87 mm in length, 5.31 mm in width, and 20.82 mm in height.
It features a maximum drain-source resistance of 0.27 ohms.
It is designed for through-hole mounting.
The typical gate charge at Vgs is 76 nC.
It is compliant with RoHS and IEC 61249-2-21 standards.
This model is a Type N-Channel MOSFET.
It is suitable for power switching, industrial electronics, and power management systems.
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