Vishay Type N-Channel MOSFET, 48 A, 600 V Enhancement Mode, 3-Pin TO-220 Package SIHP052N60EF-GE3

Vishay SIHP052N60EF-GE3 is a high-performance Type N-Channel MOSFET designed for power electronics applications requiring efficient switching and high current capability. This discrete semiconductor device features a maximum continuous drain current of 48 A and can withstand voltages up to 600 V, making it suitable for robust industrial and electronic circuits.

The MOSFET incorporates a fast body diode and exhibits a low figure-of-merit (Ron x Qg), which contributes to its high switching speed and low gate charge of 101 nC at Vgs = 10 V, supporting rapid switching transitions in power management systems.

The device supports a maximum power dissipation of 278 W and can reliably operate in harsh environments with temperatures ranging from -55°C to 150°C. Its through-hole TO-220 package with 3 pins enables easy mounting and effective thermal management in electronic assemblies.

The enhancement mode channel offers precise gate control with a maximum gate-source voltage threshold of 30 V, ensuring stable operation in power supply, inverter, and motor control applications. Typical forward voltage is 1.2 V, and its compact dimensions (Height 14.4 mm, Length 10.52 mm, Width 4.65 mm) make the MOSFET ideal for integration into a wide range of electronic designs.

This MOSFET is widely applicable in industrial power supplies, switch-mode power supplies (SMPS), automotive electronics, motor drives, and renewable energy systems, delivering reliable performance for demanding electrical engineering tasks.

Set includes the standard 3-pin TO-220 MOSFET body with robust construction ensuring durability and sustained operation. Designed with 4th generation E series technology for reduced switching and conduction losses. Features a low figure-of-merit (Ron x Qg) for improved efficiency.

Equipped with a fast body diode and low effective capacitance. Supports a maximum power dissipation of 278 W and high thermal operating range up to 150°C. Utilizes an enhancement mode channel for precise control and performance.

Mount type is through-hole with a compact 3-pin TO-220 form factor. Gate charge is 101 nC at specified gate voltage for rapid switching. Maximum gate-source voltage rating is 30 V providing robust gate control. Operates reliably in temperatures from -55°C to 150°C.

Standard package dimensions: Height 14.4 mm, Length 10.52 mm, Width 4.65 mm. For extensive electronic component selections including MOSFETs and power semiconductors, explore EnvMart categories and trusted brands.

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