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Infineon OptiMOS-T Type N-Channel MOSFET 17 A 250 V Enhancement 3-Pin TO-263 IPB17N25S3100ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.4mm |
| Length | 10mm |
| Model | IPB17N25S3100ATMA1 |
| Width | 9.25mm |
| Mount Type | Surface |
| Series | OptiMOS-T |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 107W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.9V |
Key Features
- Maximum continuous drain current of 17 A supports substantial load requirements.
- 250 V maximum drain-source voltage enables high-voltage switching capabilities.
- 100 mΩ maximum drain-source resistance reduces conduction losses.
- Low typical gate charge of 14 nC allows efficient switching control.
- Forward voltage of 0.9 V lowers diode conduction drops for improved efficiency.
- Maximum power dissipation rating of 107 W supports high power operation.
- Robust TO-263 3-pin surface-mount package ensures ease of use on PCBs.
- Wide operating temperature range from -55°C to 175°C suited for harsh environments.
Product Description
Infineon IPB17N25S3100ATMA1 OptiMOS-T Type N-Channel MOSFET offers a maximum continuous drain current of 17 A and maximum drain-source voltage of 250 V in a compact TO-263 3-pin surface-mount package. This enhancement mode device is engineered to meet the demanding requirements of automotive and industrial power systems needing high voltage switching performance.
The device features a low maximum on-resistance of 100 mΩ, which reduces power losses during conduction, and a typical gate charge of 14 nC to facilitate efficient and controlled switching in power supplies and motor drives. The forward voltage drop of 0.9 V minimizes diode conduction losses further enhancing efficiency.
Designed for thermal endurance, the MOSFET supports up to 107 W of power dissipation and operates reliably across a wide temperature spectrum from -55°C to 175°C. This makes it ideal for applications that experience harsh ambient conditions such as automotive DC-DC converters, power-management modules, and industrial power supplies.
Applications include high-voltage switching in automotive electronics, motor drive half-bridges, switch-mode power supplies, and industrial power management. Compliance with the automotive AEC-Q101 standard assures enhanced reliability for automotive systems.
Effective thermal management through PCB design and heat sinking is recommended to maintain safe junction temperatures during continuous operation at 17 A. The maximum gate-source voltage rating of ±20 V requires consideration for protective mechanisms against voltage spikes in inductive switching environments.
Maximum continuous drain current of 17 A supports demanding load currents. 250 V maximum drain-source voltage enables use in high-voltage circuits. Low RDS(on) of 100 mΩ enhances energy efficiency. 14 nC gate charge enables fast and controlled switching.
107 W maximum power dissipation allows high power operation. Wide temperature range operation from -55°C to 175°C suits harsh environments. AEC-Q101 automotive qualification ensures high reliability. Compact TO-263 package supports easy PCB integration.
Explore the comprehensive range of Infineon semiconductors and MOSFETs for diverse industrial and automotive applications at EnvMart for reliable component sourcing.
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Frequently Asked Questions
The maximum continuous drain current of this model is 17 A, allowing it to support substantial load requirements.
This unit has a maximum drain-source voltage rating of 250 V, enabling high-voltage switching capabilities.
The maximum power dissipation rating for this MOSFET is 107 W, which supports high power operation.
It has a typical gate charge of 14 nC, which allows for efficient switching control.
The maximum drain-source resistance (RDS(on)) is 100 mΩ, which helps reduce conduction losses.
This model operates within a wide temperature range from -55°C to 175°C, making it suitable for harsh environments.
It is housed in a compact TO-263 3-pin surface-mount package, which facilitates easy integration on PCBs.
This MOSFET complies with the AEC-Q101 automotive standard, ensuring enhanced reliability for automotive applications.
The forward voltage drop is 0.9 V, which helps minimize diode conduction losses and improves efficiency.
The maximum gate-source voltage rating is ±20 V, which should be considered for protective mechanisms in inductive environments.
This model is suitable for high-voltage switching in automotive electronics, motor drive half-bridges, and switch-mode power supplies.
The dimensions of this model are 4.4 mm in height, 10 mm in length, and 9.25 mm in width.
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