Infineon OptiMOS 3 Type N-Channel MOSFET 20 A 60 V Enhancement 8-Pin TSDSON BSZ110N06NS3GATMA1

Infineon BSZ110N06NS3GATMA1 is a high-performance N-channel MOSFET from the OptiMOS 3 series, engineered for demanding power management applications requiring up to 20 A continuous current and 60 V drain-source voltage. Packaged in a compact 8-Pin TSDSON surface mount format, this device is optimized to meet enhanced energy efficiency and power density standards in electronic circuits.

The MOSFET features a low on-resistance (Rds(on) of 11 mΩ), enabling reduced conduction losses and improved thermal performance, suitable for switching power supplies (SMPS) and DC/DC converter applications. Its enhancement mode channel ensures excellent gate charge and switching characteristics, with a forward voltage of 0.9 V and maximum gate-source voltage rating of 20 V.

Designed to operate reliably across an extended temperature range from -55°C to 150°C, it supports high power dissipation of up to 50 W. The compact dimensions of 3.4 mm by 3.4 mm by 1 mm allow for flexible PCB layout and integration into compact electronic devices.

Infineon OptiMOS technology focuses on efficient power switching and low gate charge, making this transistor ideal for industrial, communications, computing, and automotive power electronics applications, though this particular model is not automotive standard qualified.

Manufactured in Malaysia, this MOSFET provides robustness and reliability with Pb-free plating compliant with current environmental standards. The device is suitable for applications requiring efficient power density in limited space environments.

This MOSFET belongs to the OptiMOS 3 series designed for high performance. It provides a maximum continuous drain current of 20 A for efficient power management. The device features a low maximum drain-source resistance of 11 mΩ to minimize conduction losses.

Operates with an enhancement channel mode and has a forward voltage of 0.9 V for improved switching. It supports a maximum gate-source voltage of 20 V and can dissipate up to 50 W of power. Operating temperature range extends from -55°C to 150°C for reliability in harsh environments.

Compact package dimensions: 3.4 mm length, 3.4 mm width, and 1 mm height. Surface mount package type TSDSON with 8 pins suitable for space-constrained applications. Explore more Infineon MOSFETs and semiconductor components on EnvMart for your industrial and electronic design needs.