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onsemi 100 V 3 A Fast Recovery Diode 2-Pin DO-214AA ES3B
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.41mm |
| Length | 7.11mm |
| Model | ES3B |
| Width | 6.22mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-214AA |
| Minimum Operating Temperature | -50°C |
| Pin Count | 2 |
| Automotive Standard | AEC-Q101 |
| Maximum Continuous Forward Current If | 3A |
| Peak Reverse Repetitive Voltage Vrrm | 100V |
| Diode Configuration | Single |
| Rectifier Type | Fast Recovery |
| Peak Reverse Current Ir | 500μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A |
| Maximum Forward Voltage Vf | 950mV |
| Peak Reverse Recovery Time trr | 30ns |
Key Features
- Maximum continuous forward current is 3 amperes.
- Peak reverse repetitive voltage is 100 volts.
- Fast recovery type diode with peak reverse recovery time of 30 nanoseconds.
- Maximum forward voltage of 950 millivolts ensuring efficient rectification.
- Compact DO-214AA package with dimensions 7.11 mm length, 6.22 mm width, and 2.41 mm height.
- Operating temperature ranges from -50°C to 150°C for reliable performance.
- Automotive standard compliant with AEC-Q101 certification.
- Peak non-repetitive forward surge current of 100 amperes suitable for transient conditions.
Product Description
onsemi ES3B Fast Recovery Diode 2-Pin DO-214AA offers robust electrical characteristics with a maximum continuous forward current of 3 A and peak reverse voltage of 100 V. This surface-mount diode is engineered for high efficiency and fast switching performance, benefiting power supply circuits, automotive electronics, and industrial semiconductor needs.
The diode’s fast recovery time of 30 ns reduces switching losses, making it ideal for high-frequency rectification tasks. Its maximum forward voltage drop is 950 mV, balancing conduction losses for optimal efficiency.
Encased in a standard DO-214AA package, the ES3B features compact dimensions (7.11 mm length, 6.22 mm width, 2.41 mm height) suitable for space-constrained PCB layouts. Compliance with the automotive standard AEC-Q101 ensures reliability under harsh environmental conditions including temperature ranges from -50°C up to 150°C.
The device supports a peak non-repetitive forward surge current of 100 A, providing resilience against transient current spikes. Its 2-pin single diode electrical configuration simplifies PCB design and assembly.
Maximum continuous forward current of 3 A. Peak reverse repetitive voltage of 100 V. Fast recovery diode with 30 ns recovery time. Maximum forward voltage rating of 950 mV. Compact DO-214AA surface mount package. Operating temperature range -50°C to 150°C.
AEC-Q101 automotive standard compliant. Supports 100 A surge current. Single diode configuration with 2 pins. Suitable for power supplies, automotive, and industrial semiconductor applications.
This onsemi ES3B diode is a reliable semiconductor component for high-performance applications requiring fast switching and robust electrical ratings. Explore more on semiconductor diodes and rectifiers through EnvMart’s industrial product categories.
Explore more products in our Schottky Diodes & Rectifiers category.
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Frequently Asked Questions
The maximum continuous forward current of the ES3B diode is 3 amperes.
The peak reverse repetitive voltage for the ES3B diode is 100 volts.
This fast recovery diode has a peak reverse recovery time of 30 nanoseconds.
The dimensions of the DO-214AA package are 7.11 mm in length, 6.22 mm in width, and 2.41 mm in height.
The operating temperature range for the ES3B diode is from -50°C to 150°C.
Yes, the ES3B diode is compliant with the AEC-Q101 automotive standard.
The maximum forward voltage drop of the ES3B diode is 950 millivolts.
The peak non-repetitive forward surge current rating for this model is 100 amperes.
The ES3B diode features a single diode configuration with 2 pins.
The peak reverse current for the ES3B diode is 500 microamperes.
The mount type for the ES3B diode is surface mount.
This diode is suitable for applications in power supplies, automotive electronics, and industrial semiconductor needs.
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